方法和化学沉积浴场，半导体芯片上使用四个优先铜铜电解池。
Method and baths for electroless depositing Cu on a semiconductor chip using four preferred Cu electroless baths.
电流在与电解质接触的半导体材料的一或多个表面上形成多孔层。
The current forms a porous layer on the one or more surfaces of the semiconductor material in contact with the electrolyte.
将电解质加热且在该电解质与半导体材料上引入偏压而引起电流在电解质与半导体材料之间流动。
The electrolyte is heated and a bias is introduced across said electrolyte and the semiconductor material causing current to flow between the electrolyte and the semiconductor material.
染料增感半导体层（3）和多孔绝缘层（4）由电解质浸透。
The dye-sensitized semiconductor layer (3) and the porous insulating layer (4) are impregnated with an electrolyte.
染料增感半导体层（3）和多孔绝缘层（4）由电解质浸透。
The dye-sensitized semiconductor layer (3) and the porous insulating layer (4) are impregnated with an electrolyte.
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