介绍了氮化硅球的加工工艺过程。
The technology procedure of silicon nitride ball is introduced.
氮化硅粉料表面基团的种类和数量随制备工艺和生产厂家的不同有明显的差异。
On the particle surface, and that species and amount of theses surface groups varied with production methods and manufacturers.
现阶段的几种氮化硅粉体的制备方法存在着很多不足，因此采用燃烧合成工艺制备氮化硅粉体。
In several methods to prepare silicon nitride powder there exist some shortages in the present, so self-propagating high temperature synthesis is developed for fabricating the powder.
在氮化硅波导上进行的工艺实验表明，实验结果与理论分析有很好的一致性。
The experiment results on silicon nitride waveguide are in good agrement with the theoretical analysis.
阐述了氮化硅结合碳化硅窑具材料的生产技术、生产工艺流程及使用情况。
The productive technology and productive flowsheet of Si3N4 bonded SiC kiln furniture materials were introduced in this paper, and the serving situation has been investigated.
利用等离子体增强化学气相沉积（PECVD）工艺，在不同射频功率，不同反应气压条件下制备了氮化硅薄膜。
SiN thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) under various power and pressure conditions.
利用等离子体增强化学气相沉积（PECVD）工艺，在不同射频功率，不同反应气压条件下制备了氮化硅薄膜。
SiN thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) under various power and pressure conditions.
应用推荐