火箭污水处理系统。这个由斯坦福大学研究设计的以氧化氮为动力的火箭推进器，也可用于污水处理工厂以减少温室气体排放。
Rocket sewage This nitrous oxide-powered rocket thruster designed at Stanford can also be used in a sewage treatment plant to reduce greenhouse gas emissions.
火箭污水处理系统。这个由斯坦福大学研究设计的以氧化氮为动力的火箭推进器，也可用于污水处理工厂以减少温室气体排放。斯坦福大学。
Rocket Sewage This nitrous oxide-powered rocket thruster designed at Stanford can also be used in a sewage treatment plant to reduce greenhouse gas emissions. Stanford University.
一种公共分配中心，向自动化晶片处理系统中的各个部分提供所有的电源、气体、化学原料和其它服务。
A common distribution core that provides all electrical power, gases, chemicals, and other services to the sectors of an automated wafer processing system.
介绍含有碳黑、渣油、酸性气体的灰水处理系统的改造过程。
The modification for the treatment system of ash water containing carbon black, residual oil, acid gas was introduced in this paper.
该模型的应用可为垃圾填埋场进行填埋气体产生量预测及收集处理系统的设计、管理提供合理的依据。
It thus provides a scientific basis for environmental impact prediction and assessment of LFG generation and for designing and management of LFG collection and treatment systems.
根据目前油库泵站内存在可燃气体经常泄漏的实际情况，提出并应用计算机信息处理系统解决可燃气体泄漏监控问题。
Based on the practical situation of flammable gas leakage from pump station in oil storage, flammable gas leakage inspection by computer information process system to solve the problem is suggested.
如果气体易燃、有腐蚀性、有毒或是氧化剂，采取合适的措施通过在把气体排入大气之前使用适当废弃物处理系统使它变得无害。
If the gas is flammable, corrosive, toxic, or an oxidant, take appropriate measures to render it innocuous by employing a suitable disposal system before venting the gas to the atmosphere.
具纯水系统或废水处理系统或空气污染防制系统制程冰水系统，特殊气体系统，电力系统改善与维护实务经验者尤佳。
Have experience with operating and improving for PW system, waste water system, air pollution system, PCW system, special gas system, electric power system.
本发明还提供了一种包括处理系统的处理工具，处理系统用于利用HCD处理气体在衬底上形成含硅膜。
A processing tool containing a processing system for forming a silicon-containing film ons substrate using a HCD process gas is provided.
本发明还提供了一种包括处理系统的处理工具，处理系统用于利用HCD处理气体在衬底上形成含硅膜。
A processing tool containing a processing system for forming a silicon-containing film ons substrate using a HCD process gas is provided.
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