模拟及实验证实，该模式可显著抑制PMOS结构栅氧化过程中的杂质分凝。
The simulation and experiment have shown that the pattern may restrain remarkably impurity segregation effect in the process of PMOS structure grid oxidization.
模拟及实验证实，该模式可显著抑制PMOS结构栅氧化过程中的杂质分凝。
The simulation and experiment have shown that the pattern may restrain remarkably impurity segregation effect in the process of PMOS structure grid oxidization.
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