在较高的温度下，非晶自发成核和晶化，从而限制了金属诱导晶体生长速度。
The nucleation and crystallization of a-Si will occ ur spontaneously at higher temperature, which will restrict the MILC. The length and thickness of Ni source also affect the MILC growth, the...
在较高的温度下，非晶自发成核和晶化，从而限制了金属诱导晶体生长速度。
The nucleation and crystallization of a-Si will occ ur spontaneously at higher temperature, which will restrict the MILC. The length and thickness of Ni source also affect the...
利用接种生长方法研究了TATMP对过饱和溶液中碳酸钙晶体生长速度的影响。
The effect of TATMP on the growth rate of calcite crystals in supersaturated solutions is studied with seeded growth technique.
从DKDP晶体生长基元的形成、扩散、吸附等方面研究了DKDP晶体生长的微观机制，提出了提高晶体生长速度的具体方法。
The growth mechanism of DKDP crystal was described by the formation, diffusion and adsorption of growth unit of DKDP crystal. The method of increasing the growth rate was discussed.
在垂直布里奇曼法（VBM）晶体生长的过程中，坩埚下降速度和晶体生长速度之间的关系对生长出来的晶体质量有很大的影响。
During the crystal growth by VBM, the relationships between crucible descending rate and crystal growth rate greatly influence the crystal quality.
在直拉法晶体生长过程中，主要是通过调节提拉速度和加热器温度跟踪目标曲线来实现晶体等径生长的。
In the Czochralski crystal growth process, the main method is regulating the pulling speed and heater temperature to track the target curves, in order to achieve the diameter growth of crystal.
在直拉法晶体生长过程中，主要是通过调节提拉速度和加热器温度跟踪目标曲线来实现晶体等径生长的。
In the Czochralski crystal growth process, the main method is regulating the pulling speed and heater temperature to track the target curves, in order to achieve the diameter growth of crystal.
应用推荐