断裂韧性与晶体学取向的关系亦作了分析。
The relationship between fracture toughness and crystal orientation hasbeen also examined.
铜单晶线材中位错蚀坑密度与材料浸蚀时间,变形量以及晶体学取向有关。
The dislocation etch pits density(EPD) of copper single wires is related with corroded time, deformative extent and crystal orientation of material.
铜单晶线材中位错蚀坑密度与材料浸蚀时间,变形量以及晶体学取向有关。
The dislocation etch pits density(EPD) of copper single wires is related with corroded time, deformative extent and crystal orientation of material.
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