由此得到温度系数很小的带隙基准电压。
Therefore, we get the bandgap reference voltage with very small temperature coefficient.
硅是间接带隙半导体，不能有效地发光。
Silicon is an indirect bandgap semiconductor emitting light inefficiently.
结果表明，这种结构具有一类新型的光子带隙。
It's shown that this structure can possess a new type of photonic gap.
光子晶体是一种具有光子带隙的新型功能材料。
Photonic crystals are a new kind of materials with photonic band gap.
设计了一种高准确度无电阻的带隙基准电压源。
A high accuracy band-gap reference voltage without resistor is designed.
分析了晶格畸变和能带间排斥效应对带隙的影响。
The lattice strain and band repulsion affecting band gap is investigated.
给石墨烯引入带隙的方法之一是制作极窄的石墨烯带。
One way of introducing a bandgap into graphene is to make extremely narrow ribbons of the material.
这种复合结构体系具有直接带隙半导体的光学特性。
Meanwhile the composite exhibits the optical features of a semiconductor with direct band gap.
这种带足够窄以至于形成电学带隙，从而拥有开关性能。
The ribbons are narrow enough to have an electronic bandgap and thus switching properties.
平板光子晶体存在一个最佳厚度，使其导模带隙最大。
A photonic crystal slab has an optimal thickness, which makes the photonic band gap maximum.
本文同时研究分析了康托结构中的零有效折射率带隙。
We also investigate and analyzed the property of the zero-band gap of the cantor structure.
然而，与半导体硅不同，石墨烯的价带和导带之间没有带隙。
However, unlike the semiconductor silicon, graphene has no gap between its valence and conduction bands.
研究了光子晶体多模波导在非光子带隙区光场的传输特性。
The properties of the propagating field in multimode photonic crystal waveguides (PCWs) exhibiting no photonic band gaps (PBGs) are investigated.
本文提出了一种新的调节人工欧泊晶体的光学带隙的方法。
A new method has been proposed to modify the photonic band gap of synthetic opal.
设计了一种具有良好稳定性和高精度的带隙基准电压源电路。
A bandgap voltage reference circuit with good stability and high accuracy is designed in this pa - per.
它必须失去足够的能量，属于过去的带隙纳入地方电子获准。
It must lose enough energy to fall past the bandgap into the area where electrons are allowed.
随着耦合缺陷点数目增加，缺陷模在光子带隙内形成一个缺陷带；
The defect modes form a defect band in a photonic band gap when the number of coupled point defects increases.
能流和态密度的计算结果都表示十二重准晶光子晶体具有光子带隙。
The simulation of total energy flow and the density of states show that the dodecagonal QPC has photonic gap for TM polarized electromagnetic waves.
如果把双层石墨烯加工成细线（纳米带）状，带隙还能进一步扩大。
If the double-layer Graphene processed into light-weight (nanobelts), band-gap can further increased.
不同于常规电压求和带隙基准，电流求和是实现低压基准的主要方法。
Current Summing is the basic method to realize low-voltage reference which is different from that of conventional voltage mode.
天线内层是窄带隙的纳米管，与此相反，外层的纳米管则具有较宽的带隙。
The inner layer of the antenna contains nanotubes with a small bandgap, and nanotubes in the outer layer have a higher bandgap.
理论计算和实验表明，入射角对光子带隙的宽度和带隙中心波长均有影响。
The results show that the angle of incidence has effect on band-gap width and central wavelength of band gap .
运用带隙基准的原理，提出了一种带启动电路的低功耗带隙基准电压源电路。
A low power CMOS bandgap voltage reference source with a start-up circuit is presented based on the bandgap voltage theory.
利用全矢量平面波法计算了三角结构的光子带隙型光子晶体光纤的带隙分布。
The photonic band-gap of triangle structure photonic band-gap PhotonicCrystal Fiber (PBG-PCF) is computed by FPWM.
基准电压产生电路为带隙电路的扩展，节省了资源并得到了高稳定度的基准电压。
The voltage reference generator was the expansion of the bandgap circuit for saving the resources.
给定晶格对称结构，选择具有相同对称形状的空气孔能得到较大的绝对光子带隙。
Given a lattice symmetry, larger absolute photonic band gap was achieved by selecting an air hole shape of the same symmetry.
介绍群论在光子晶体带隙平面波展开法计算中的应用，推导了改进后的算法公式。
Group theory is introduced into the calculation of photonic band gap with the plane wave expansion method, and improved calculation formulae are derived.
带隙基准源是集成电路中的重要单元，输出不随温度、电源电压变化的基准电压或电流。
Bandgap reference source is an important unit in integrated circuits, which supplied reference voltage or current independent of temperature and supply voltage.
带隙基准源是集成电路中的重要单元，输出不随温度、电源电压变化的基准电压或电流。
Bandgap reference source is an important unit in integrated circuits, which supplied reference voltage or current independent of temperature and supply voltage.
应用推荐