很多代以来,EOT缩小的一个大问题就是多晶硅栅的耗尽电容问题。
For many generations, the most significant part of the EOT scaling problem was the depletion capacitance of polysilicon gates.
其它硅化物层(50.4 - 50.6)处于源极、漏极和多晶硅栅极的顶部。
Other silicide layers (50.4-50.6) are on the tops of the source, drain and polysilicon gate.
其它硅化物层(50.4 - 50.6)处于源极、漏极和多晶硅栅极的顶部。
Other silicide layers (50.4-50.6) are on the tops of the source, drain and polysilicon gate.
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