本文区分和研究外腔半导体激光器的两种窄谱机制，从而简捷地得出了其线宽公式。
The two kinds of the linewidth-narrowing mechanisms in external cavity semiconductor lasers are differentiated and studied, then the spectral linewidth formula is simply. obtained.
对于外腔半导体激光器，影响其稳定度的因素主要是工作温度的漂移和驱动电流的变化。
The main factors to influence stability of ECLD are drift of working temperature and changes of driving current.
以可调谐双稳外腔半导体激光器(ECLD)为例，指明了在损耗调制下，扰动近似分析可能会失效。
Taking an external cavity laser diode (ECLD) as an example, calculations indicate that the perturbation analysis may become invalid under loss modulation.
本文用量子力学的方法求得了外腔半导体激光器（LD）的线宽，给出了抑制LD线宽的最佳反馈条件。
The linewidth of an external cavity semiconductor laser(LD) is presented quantum-mechanically. The best feedback conditions are given for the suppression of LD linewidth.
提出并实验验证了一种新的基于掺镧锆钛酸铅(PLZT)材料的电光陶瓷偏转器的腔内光束扫描外腔半导体激光器。
A novel beam-steering external cavity diode laser using an intracavity lead lanthanum zirconate titanate (PLZT) electro-optic ceramic deflector is proposed and demonstrated experimentally.
对宽带调谐外腔半导体激光器进行了理论及实验研究，分析了其最大调谐范围和连续调谐条件，为宽带可调谐激光器的设计提供了依据。
The wide band wavelength tuning external cavity semiconductor laser was theoretically and experimentally analyzed. The maximum tuning range and the continuous tuning condition were given.
本文给出了在环形光纤外腔光反馈之下半导体激光器频偏特性的小信号分析理论。
In this paper a complete small signal analysis for semiconductor laser frequency chirping in the presence of optical fiber ring feedback is presented.
实验中发现，传统结构的光泵浦垂直外腔面发射半导体激光器，随着泵浦功率密度的增加，器件的温升现象严重。
In experiment, it was found that temperature increasing of original OPS-VECSEL is very serious with increasing pumping power a new type of semiconductor laser.
本发明是一种使半导体激光列阵输出双波长的外腔，属于半导体激光器领域。
The invention relates to an external cavity which allows a semiconductor laser array to output double wavelengths and belongs to the field of the semiconductor laser.
本发明是一种使半导体激光列阵输出双波长的外腔，属于半导体激光器领域。
The invention relates to an external cavity which allows a semiconductor laser array to output double wavelengths and belongs to the field of the semiconductor laser.
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