等离子体中粒子在基片上生长薄膜。
Plasma recondensation on the substrate and growing thin films.
首先在基片上覆盖一个掩膜片。
在陶瓷基片上淀积了薄薄一层半导体。
A thin layer of semiconductor is deposited on a ceramic base.
文章主要介绍氮化铝陶瓷基片生产的关键技术。
The technology of AlN ceramic substrate volume production is introduced in this paper.
研究了衬底材料、基片温度对膜微结构的影响。
The effect of substrate materials and its temperature on film micro structure is studied.
基片传递设备，基片处理系统，和基片传递方法。
Substrate transfer apparatus, substrate process system, and substrate transfer method.
电子发射器件，电子源基片，成像设备及其生产方法。
Electron-emitting device, electron source substrate, imaging apparatus and production method thereof.
分析了超光滑反射镜基片的表面波度对反射率的影响。
Effect of surface waviness of ultra-smooth reflector substrates on their reflectivity is discussed.
电光器件基片，电光器件，电子器件和投影显示设备。
Photoelectric device substrate, photoelectric device, electronic device and projection display device.
电光器件基片，电光器件，电子器件和投影显示设备。
Electro-optical device substrate, electro-optical device, electronic device, and projection display device.
鞘层电容的非线性变化导致了基片偏压的非线性变化。
The nonlinear change of sheath capacitance result in the nonlinear change of tuned substrate self-bias.
进而研究了其在镍磷敷镀的硬盘基片CMP中的抛光特性。
Then its CMP properties on hard disk substrate with nickel-phosphorous plated was studied.
为了验证这种方法，我们在硅基片上构造出虚拟的传输线。
To verify this method, we fabricated artificial transmission lines on a si substrate.
在国内，对铁氧体基片精密制造技术还没有进行系统的研究。
In our country, the systemic study on precision manufacturing technology of microwave substrate has been vacant by now.
从而最终获得光盘基片注射压缩成型所需的合适的工艺参数值。
Thereby, the appropriate processing parameters for injection compression molding of optical disk have been obtained.
实验结果表明，非晶硅的沉积速率与气室气压和基片温度密切相关。
Experimental results show that the deposition rate of silicon film strongly depends on silane pressure and substrate temperature.
通过在基片的下方放置磁铁，在放电空间中引入了纵向的磁场梯度。
A longitudinal gradient magnetic field was introduced into the discharge space by placing a permanent magnet under the substrate.
而且能量的影响在较低的基片温度或是较高的沉积速率时更加显著。
This effect is very significant at low substrate temperature or high deposition rate.
在光栅固定件中至少设置一个挠曲连接部，它允许基片热膨胀和收缩。
At least one flexure joint is provided in the grating mount which permits thermal expansion and contraction of the substrate.
使用电场辅助离子交换和热离子交换技术在玻璃基片上制作了平板波导。
Planar optical waveguides in glass have been fabricated with field-assisted ion exchange and thermal ion exchange technology.
型半导体氧化锌薄膜，其制备方法，和使用透明基片的脉冲激光沉积方法。
P-type semiconductor zinc oxide films, process for preparation thereof, and pulsed laser deposition method using transparent substrates.
利用该数学模型可进一步研究基片杂质与磁畴特性，以及盘片误码的关系。
The relations among the substrate impurity, magnetic domain characteristics and disk errors are further studied by the mathematical model.
在实验过程中还发现弧源不同的接地方式对基片台悬浮电位有很大的影响。
It was found that the substrate floating potential changes a lot when the grounded state of arc source changed.
通过实验证明，薄膜厚度、光催化时间、基片种类均对苯酚转化率有影响。
It shows that the phenol solution translate are affected by film thickness photocatalytic time and kind of bases.
且随着基片偏压值的增大，电子能量有缓慢的增加，而电子密度则显著下降。
And, with the enhancement of substrate bias voltage, electron energy increase gradually, electron density decrease sharply.
有限尺寸介质基片上的共面波导是一种非常接近于工程应用状态的物理模型。
The coplanar waveguide on the substrate with finite dimensions is a physical model which is very closed to the engineering situation.
利用红外辐射测温原理，设计成半导体基片上激光焦斑温度不接触测量系统。
With IR temperature-measuring principle, a non-contact measuring system for measuring laser spot temperature on semiconductor substrate is designed.
传统晶体管使用一个叫做“栅极”的金属电极，以控制电子在平面硅基片上的沟道中的流动。
Conventional transistors use a metal electrode, called the gate, to control the flow of electrons through a planar channel in the silicon substrate.
传统晶体管使用一个叫做“栅极”的金属电极，以控制电子在平面硅基片上的沟道中的流动。
Conventional transistors use a metal electrode, called the gate, to control the flow of electrons through a planar channel in the silicon substrate.
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