介绍了垂直腔面发射激光器研究进展。
采用一种新的工艺方法提高了垂直腔面发射激光器的输出功率。
A new process method is proposed to improve the light output power of GaAs vertical cavity surface-emitting lasers (VCSELs).
同时也说明菲涅耳系数矩阵法设计垂直腔面发射激光器是一种快速准确的方法。
At the same time, it shows that studying and designing the vertical-cavity surface-emitting lasers optical properties using the Fresnel matrix method is a simple and fast way.
垂直腔面发射激光器（VCSEL）是当前光电子学领域最活跃的研究课题之一。
Vertical Cavity Surface Emitting Lasers (VCSELs) have been studied extensively in the field of optoelectronics over the past few years.
基于垂直腔面发射激光器(VCSEL)的高速光模块在现代光通信系统中的应用己越来越广泛。
The applications of VCSEL-based high-speed modules in the modern optical communication system are more and more practical.
本发明涉及一种垂直腔面发射激光器及其制造方法，该垂直腔面发射激光器能够减小寄生电容同时抑制功耗。
A vertical cavity surface emitting laser capable of reducing parasitic capacitance while suppressing power consumption, and a method of manufacturing thereof are provided.
对垂直腔面发射激光器的湿法腐蚀技术、选择氧化工艺、合金工艺等关键工艺进行了研究，得到了最佳工艺条件。
We have explored technologies for the fabrication of VCSELs, such as wet etching, wet and selective oxidation and annealing.
论文讨论了FSO系统光源，通过对激光器的比较分析，指出垂直腔面发射激光器在FSO系统中具有较好的应用前景。
The system optical source of FSO is discussed, and pointed out the Vertical Cavity Surface Emit ting laser has good application prospect in FSO via analyzing the laser contrastively.
本文分析总结了垂直腔面发射激光器的阈值特性、光输出特性、模式特性、调制特性、偏振特性、远场特性以及热阻效应。
In the paper, the threshold, light output, mode, modulation, polarization, far field characteristics and thermal resistance effects are analyzed and generalized.
通过对垂直腔面发射激光器(VCSEL)台面结构的深入研究，提出了新型环形分布孔结构。并制作了这种新结构器件。
A new mesa structure with ring-distributed perforations was presented, and vertical-cavity surface emitting laser (VCSEL) with such structure was fabricated.
采用一种新工艺制作了垂直腔面发射激光器(VCSEL)，即用开环分布孔取代以往的环形沟道作为氧化物限制技术的注入窗口。
A new process method, using open annulus distributed holes in place of ring trench as the lateral oxidation Windows, is reported to fabricate vertical-cavity surface emitting laser (VCSEL).
结果表明，相同周期数情况下线性渐变dbr相对于其他两种结构粗糙度最小，具有良好的表面形貌，可以应用于垂直腔面发射激光器的研制。
It is shown that the interface linear graded DBR has the minimum roughness and better surface morphology, which can be used in the fabrication of vertical cavity surface emitting lasers.
光辐射的光源（103、411）可以从包括二极管发光器、LED、多模垂直腔面发射激光器（VCSEL）、激光二极管和白光的列表中选择。
The source 103, 411 of optical radiation may be selected from a list including diode emitters, LEDs, multimode vertical-cavity surface-emitting lasers (VCSELs), laser diodes, and white light.
该GN2108是一款四通道c DR集成了垂直腔面发射激光器(VCSEL)驱动程序和GN2109是一款四通道c DR集成跨阻放大器(TIA)。
The GN2108 is a quad channel CDR with integrated vertical cavity surface emitting laser (VCSEL) drivers, and the GN2109 is a quad channel CDR with integrated transimpedance amplifiers (TIAs).
半导体垂直腔面发射量子阱激光器是当前光电子学领域最活跃的研究课题之一。
Currently quantum well VCSEL (Vertical Cavity Surface Emitting Laser) is one of the most active research problems in the field of optoelectronics.
利用数值模拟的方法研究了电流调制下偏置电流和调制频率对垂直腔面发射半导体激光器(VCSEL)混沌动力学特性的影响。
The influence of bias current and modulation frequency on chaos dynamics of vertical-cavity surface-emitting laser (VCSEL) subject to direct current modulation is investigated by numerical simulation.
实验中发现，传统结构的光泵浦垂直外腔面发射半导体激光器，随着泵浦功率密度的增加，器件的温升现象严重。
In experiment, it was found that temperature increasing of original OPS-VECSEL is very serious with increasing pumping power a new type of semiconductor laser.
从理论上推出多量子阱垂直腔面发射半导体激光器的速率方程。
The rate equations for multi quantum well VCSELs are deduced theoretically; and its output characteristics, i.
本文报道了一种新型高功率径向桥电极垂直腔面发射半导体激光器（VCSEL）的研制。
We report the fabrication of a novel high-power vertical-cavity surface-emitting laser (VCSEL) with radial bridge electrodes in this letter.
从理论上推出多量子阱垂直腔面发射半导体激光器的速率方程。
The rate equations for multi quantum well VCSELs are deduced theoretically;
从理论上推出多量子阱垂直腔面发射半导体激光器的速率方程。
The rate equations for multi quantum well VCSELs are deduced theoretically;
应用推荐