均匀的蚀刻允许通过简单的各向同性蚀刻来减小电活性构件的临界尺寸的有效方法。
Uniform etching allows for an efficient method of reducing a critical dimension of an electrically active structure by simple isotropic etch.
均匀的蚀刻允许通过简单的各向同性蚀刻来减小电活性构件的临界尺寸的有效方法。
Uniform etching allows for an efficient method of reducing a critical dimension of an electrically active structure by simple isotropic etch.
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