本文介绍了研究者在提高反应烧结碳化硅陶瓷性能方面所做的工作。
In this paper, we introduce some methods on how to improve the properties of RBSC material.
研究了液态硅参与下的反应烧结碳化硅的工艺参数、显微组织对其电阻率的影响。
The relationship of technological parameters and microstructure to the resistivity of reaction-bonded silicon carbide(RBSiC) in the presence of liquid silicon was studied in this paper.
研究了反应烧结碳化硅陶瓷的显微组织和性能与生坯碳含量、成型压力以及碳粉粒度的关系。
The effects of carbon content, moulding pressure, and carbon particle size of green body on microstructure and properties of reaction-bonded silicon carbide (RBSC) have been investigated.
以碳化硅和碳为糊料的主要原料，采用素坯连接的方法焊接反应烧结碳化硅(RBSC)陶瓷。
A method of joining green state with carbide and silicon carbide was applied to join reaction-bonded silicon carbide (RBSC) ceramics.
用反应粘接的方法获得了反应烧结碳化硅材料之间、反应烧结碳化硅和重结晶碳化硅材料间的连接。
The joints between reaction-sintered silicon carbide and recrystallized silicon carbide materials have been obtained using a reaction bonding approach.
本文研究了不同成型工艺对反应烧结碳化硅陶瓷材料的素坯及烧结体的显微结构、力学性能的影响。
The influence of different shaping process on the microstructure and mechanical properties of green body and sinter was studied in this paper.
经过渗硅试验后得到的反应烧结碳化硅陶瓷中含有大量的碳化硅，以及部分的自由硅和少量的未反应的碳。
The reactive sintering silicon carbide ceramics made by ihrigizing reaction include large quantity of silicon carbide, partial Silicon and a small amount of un-reacted carbon.
考虑不同因素的影响，建立了反应烧结碳化硅反应烧结过程的一组数学模型，它们可表述为一个拟线性的抛物型方程。
Several mathematical models for reaction process of reaction bonded silicon carbide are set up, which are quasi linear parabolic systems.
考虑不同因素的影响，建立了反应烧结碳化硅反应烧结过程的一组数学模型，它们可表述为一个拟线性的抛物型方程。
Several mathematical models for reaction process of reaction bonded silicon carbide are set up, which are quasi linear parabolic systems.
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