• 提出一种基于双极工艺纵向多面MOSFET结构和工艺。

    The structure of a vertical multiple-gate MOSFET based on bipolar technology is presented.

    youdao

  • 设计称之为多晶硅覆盖技状结构双极微波功率晶体管

    A new device structure of silicon bipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed.

    youdao

  • 详细介绍了水平双极铅布电池卷绕式铅布电池的结构特点优点工艺难点和工艺要求

    The structure characteristics, advantages, key problems and technology requirement for bi-polar plate and winded electrodes were respectively described in detail.

    youdao

  • 本文首先简要介绍了电励磁电机结构、数学模型以及电动发电工作原理

    First, this thesis introduces the basic structure, static characteristic, operation principle of Doubly Salient Electro-Magnetic Motor and Generator.

    youdao

  • 文中首先介绍了电励磁发电机结构特性以及调压器工作原理

    Firstly, this thesis introduces the basic structure, static characteristic and the regulator operation principle of doubly salient electro-magnetic generator system.

    youdao

  • 基于PCB平面结构宽带天线通过推导满足天线边界条件电流积分方程,利用对PCB宽带加载天线进行了计算分析计算结果分析基础上,初步制作了单双极PCB加载天线。

    A large part of this paper is an analysis of the using of Method Of Moment in PCB wideband planar loaded antenna on the basis of a wideband antenna in PCB planar structure.

    youdao

  • 其他永磁电机相比由于结构运行原理不同永磁电机齿槽转矩削弱方法有所不同

    Because of the differences on structure and operational principle, the ways of reducing cogging torque in DSPM is different from other permanent magnet motor.

    youdao

  • 由于其自身的结构封装形式,塑封双极功率存在很多可靠性问题

    Plastic capsulation power bipolar transistor exists many reliability problems due to the structure and package style.

    youdao

  • 介绍了绝缘门性晶体管(IGBT)基本结构工作原理开关特性以及焊接逆变中的应用

    The paper introduces the basic structure, working principle and switching feature of IGBT and its application to the converter used for welding.

    youdao

  • 讨论了采用晶体管结构超宽带脉冲发生器,并电路双极性晶体管雪崩工作原理进行了具体分析

    The paper analyses the electric circuit and the working principle of the avalanche of the bipolar transistor of the pulser with a cascade connected bipolar transistor structure.

    youdao

  • 结构倒易边界法联合应用于预测具有三维复杂存在时管道消声器参数传递损失,阐述其基本原理与数值过程。

    A substructure method and a dual reciprocity boundary element method (DRBEM) are applied to calculate four-pole parameters and transmission loss of ducts and silencers with complex flow.

    youdao

  • 介绍了定子馈电电机(SDFDS)结构原理弱磁调速控制方法

    In the paper, the structure, operation principles and flux weakening control methods for the stator doubly-fed doubly salient (SDFDS) motor are introduced.

    youdao

  • 这种结构器件能有效降低困扰常规MOSFET效应寄生双极效应,大幅度减小器件尺寸

    The device size can be greatly shrunk with effectively suppressing short channel effect and parasitic bipolar effect in conventional MOSFET.

    youdao

  • 介绍一种新型结构W波段体效应中的实现,研制出了样品器件。

    A new structure of two area cathodes applied in W-band Gunn diodes was introduced and made.

    youdao

  • 本文4/68/12两种不同结构永磁电机进行详细比较,从而该电机优化设计进一步深入研究提供理论依据

    This paper will compare 8/12 DSPM with 4/6 DSPM in detail, and provide theoretic basis for design and research deeply of DSPM.

    youdao

  • 电渗析法处理低浓度SO_2吸收的研究中,首次提出阴膜双极组成二室结构的电渗析器处理低浓度SO_2吸收液的新方法。

    The means using two-compartment electrodialysis consisting ofABSTRACTanion-selective and bipolar membrane to treat the absorbed dilute SO2 solution is put forward for the first time .

    youdao

  • 电机结构及其供电电源开关形式 ,导致了在输出转矩中存在稳态转矩脉动换向转矩脉动。

    The torque-ripples of the double-salient motor are inevitable for its double salient structure and switch power source.

    youdao

  • 电机转子结构,转子上绕组磁体定子集中绕组,电机结构简单可靠

    Motor for the stator and rotor doubly salient structure, the rotor windings and no permanent magnet, the stator windings have focused on the electrical structure of simple and reliable.

    youdao

  • 结构中,钝化(112)位于衬底(110)之上,在垂直双极晶体管(118)CMOS晶体管(116)之间

    In this structure, a passivating layer (112) is positioned above the substrate (110), and between the vertical bipolar transistors (118) and the CMOS transistors (116).

    youdao

  • 结构中,钝化(112)位于衬底(110)之上,在垂直双极晶体管(118)CMOS晶体管(116)之间

    In this structure, a passivating layer (112) is positioned above the substrate (110), and between the vertical bipolar transistors (118) and the CMOS transistors (116).

    youdao

$firstVoiceSent
- 来自原声例句
小调查
请问您想要如何调整此模块?

感谢您的反馈,我们会尽快进行适当修改!
进来说说原因吧 确定
小调查
请问您想要如何调整此模块?

感谢您的反馈,我们会尽快进行适当修改!
进来说说原因吧 确定