新型双极结型场效应晶体管(BJFET)兼有双极型和单极场效应两种器件的功能特点。
The new bipolar junction field effect transistor (BJFET) has the features of both bipolar and junction field effect devices.
探讨并分析具有光致负阻特性的双极型硅光电三极管阵列中各单元器件设置偏流隔离电阻的必要性。
The necessity of setting the bias current and segregation resistances in every element of bipolar silicon photo-negative resistance phototransistor array is studied and analysed.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。
The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。
The system adopted insulated gate bipolar transistor (IGBT) as its main circuit and pulse-width modulating (PWM) technology.
绝缘栅双极型晶体管(IGBT)是应用广泛的功率半导体器件，驱动器的合理设计对于IGBT的有效使用极为重要。
Isolated gate bipolar transistors (IGBTs) are widely used power semiconductor devices. Properly designed drivers are extremely important for the effective use of IGBTs.
本文将普通的双极型IC工艺用干磁敏器件的制作中，成功地研制了一种新型三维磁敏晶体管，并在理论和实验上分析讨论了其灵敏度、线性度和失调等问题。
Using the standard bipolar IC technology, a 3-D magnetotransistor is successfully designed, The sensitivity, linearity and offset of the devices are theoretically and experimentally analyzed.
双极结型晶体管，涉及半导体功率器件技术领域。
A bipolar junction transistor relates to the technical field of a semiconductor power device.
该模型可供优化设计双极型高频、高压、低饱和压降功率器件参考。
This model will provide assistance to the optimal design of bipolar power transistor with high frequency and high…
该模型可供优化设计双极型高频、高压、低饱和压降功率器件参考。
This model will provide assistance to the optimal design of bipolar power transistor with high frequency and high…
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