结果表明该薄膜有明显的压阻效应。
They show that the film exhibits remarkable piezoresistive effect.
压阻效应随微缺陷增多而降低。
The piezoresistive effect is degraded with increasing micro - defects.
实验观测到异常的压阻效应。
利用隧道压阻理论对实验结果进行了分析。
The experimental results are explained with tunneling piezoresistive theory.
微机械陀螺常见的检测方式有电容式和压阻式。
Among the developed micromachined gyros, capacitive detection method is frequently used.
本文利用弯曲法研究了碳纳米管膜的压阻效应。
The carbon nanotubes used in this study were synthesized by hot filament chemical vapor deposition.
碳纤维混凝土的力电效应对压阻效应的影响不大。
The influence of mechano-electric effect of CFRC on piezoresistivity can be ignored.
详细讨论了压阻型压力传感器设计中若刊重要问题。
Several important problems on the design of the piezoresistive silicon pressure sensors are discussed in detail.
研究了金刚石薄膜的欧姆接触、热敏特性和压阻特性。
This property enables diamond films to be used in the field of pressure sensor applications.
文摘:提出一种可消除热零点漂移的压阻式压力传感器。
Abstract: a pressure sensor which can cancel thermal zero shift is described.
设计、制造并测试了一种新结构硅微机械压阻加速度计。
A new structure silicon piezoresistive micromachined accelerometer has been designed, fabricated and tested.
介绍了桥式硅压阻器件的工作原理、性能指标和工作特点。
The principle, specifications and performance of the silicon piezoresistive element are presented.
利用共振隧穿二极管的介观压阻特性,设计了新型的加速度计;
Using Meso-piezoresistance effect of RTD as the principle of a novel accelerometer inthe first.
着重研究了沉积工艺条件对多晶硅薄膜压阻灵敏度系数的影响。
The effect of thin film piezoresistive property related with deposit condition on polycrystalline silicon is studied.
试验结果表明,用锰铜压阻传感器测试炮孔孔壁压力是可行的。
Experimental results indicated that direct measurement of explosion pressure on the wall of a borehole by manganese-copper sensor is feasible.
镱材料具有压阻特性,其压阻系数比锰铜、碳等压阻材料要高得多。
The ytterbium material has piezoresistive effect, whose piezoresistive coefficient is higher than that of manganin or carbon.
目的建立非接触生命参数检测系统与压阻式加速度之间的数学模型。
AIM To construct the mathematical model between the non contact detecting system for life parameters and piezoresistive acceleration sensor.
压阻法是采用具有压阻效应的传感器测量冲击波压力及速度的方法。
The piezoresistive method is the way that adopt the sensor possessing the piezoresistive character measure the pressure and velocity of shock wave.
我们用该方法计算了硅压阻式加速度传感器五阶梯硅梁固频和振型。
We calculated the natural frequencies and mode of vibration for a five stepped Si-beam of Si-piezoresistive accelerometer.
半导体薄膜开始用于力敏器件,评价薄膜自身的压阻特性是十分重要的。
The thin semiconductors films make used of force sensitive devices. Evaluate the piezoresistive properties of thin films with oneself is very important.
阐述了用于冲击波超压测量的压阻式高频动态压力传感器的设计与开发。
This paper introduced the design and development of silicon piezoresistive high frequency dynamic pressure sensor which used in the measurement of shock wave superpressure.
多晶硅薄膜良好的压阻特性使其在MEMS压阻式传感器中得到了广泛应用。
Polysilicon films, due to its favourable piezoresistive properties, have been widely applied in MEMS piezoresistive sensors.
此芯片集成化程度较高,可以补偿硅压阻式压力传感器的温度误差和非线性误差。
It is mainly used to compensate temperature shift and non-linearity error of piezoresistive pressure sensor.
介绍了一种用压力一温度复合传感器对硅压阻式压力传感器温度特性的补偿方法。
A compensate method of piezoresistive pressure sensor temperature characteristic is introduced by using a pressure - temperature complex sensor.
本文以压阻式加速度计为例,探讨了其动态特性对无陀螺微惯性测量组合的影响。
The dynamic characteristics of accelerometers working on gyro free micro inertial measurement units was discussed, with a piezoresistive accelerometer as an example.
基于硅压阻式传感器的工艺过程与后续电路设计,讨论了减小其温度影响的措施。
Based on the fabrication process of silicon piezoresistive sensors and the design of subsequent conditioning circuit, the measures for reducing the temperature effects on the sensors were discussed.
各部分分别基于半导体压阻效应、电阻迁移率变化、极板间电容变化为原理制作而成。
They are based on the principle of silicon piezoresistive effect, mobility change, and variable capacitance respectively.
现已证明金刚石薄膜有压阻效应,这个性能打开了金刚石薄膜在压力传感器领域的应用。
It has been established that diamond films have piezoresistivity. This property enables diamond films to be used in the field of pressure sensor applications.
该系统可以补偿传感器(特别是硅压阻传感器)温度误差的线性部分和高阶非线性部分。
The li near errors and high order errors of a sensor (especially piezoresistive sensor) can be corrected by using this system.
在单轴压力作用下,PP/EPDM/CB复合材料轴向导电行为呈现显著的压阻行为。
Results revealed that resistance of PP/EPDM/CB conductive composites strongly depends on uniaxial pressure, showing marked piezoresistivity behavior.
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