对卢瑟福背散射分析的基本原理作了概要的介绍。
The essential principle of Rutherford backscattering analysis is explained briefly.
用卢瑟福背散射谱分析了稀土离子在多孔硅薄膜中的分布情况。
The distribution of rare earth ions embedded into porous silicon films was observed by Rutherford backscattering spectrometry.
本工作用卢瑟福背散射研究了离子束混合方法形成硅化钨的条件。
The conditions of forming tungsten silicide with As ion beam mixing have been studied by means of Rutherford backscattering.
离子注入后进行了氧化试验，并结合X射线衍射和卢瑟福背散射进行了分析。
X ray diffraction and Rutherford Back Scattering techniques were adopted to investigate and analyze the oxidation characteristics of the films.
卢瑟福背散射分析结果表明，铁、氮两种原子的密度沿膜厚度方向呈梯度变化。
Rutherford backscattering spectrometry (RBS) demonstrates that the concentration of Fe or N atoms varies gradually from the substrate to the surface through the whole thickness of the films.
卢瑟福背散射分析结果表明，铁、氮两种原子的密度沿膜厚度方向呈梯度变化。
Rutherford backscattering spectrometry (RBS) demonstrates that the concentration of Fe or N atoms varies gradually from the substrate to the surface through the whole thickness of the films.
应用推荐