基于纳米压痕理论方法，对单晶铜进行了纳米压痕试验。
On the basis of fundamental nanoindentation theory, nanoindentation of single-crystal copper has been researched.
本研究的目的是评估单晶铜引线接合的接合性和可靠性。
This study is intended to evaluate the bondability and reliability of single crystal copper wire bonding.
应用分子动力学方法模拟了带孔纳米单晶铜悬臂梁的弯曲过程。
The bending process of a single crystalline nano-copper cantilever beam with holes was simulated by using the molecular dynamic method.
通过一端固定另一端施加横向作用力驱使原子运动，得到纳米单晶铜悬臂梁弯曲的变形图。
The atomic movement of the cantilever beam was motivated by transverse force on one end while another end was fixed, through which its bending deformation image was obtained.
大部分位错花样都是在单晶和多晶铜的室温疲劳试验中首先发现的。
Most dislocation patterns are discovered firstly at room temperature in the fatigued copper single crystals and polycrystals.
铜单晶线材中位错蚀坑密度与材料浸蚀时间，变形量以及晶体学取向有关。
The dislocation etch pits density(EPD) of copper single wires is related with corroded time, deformative extent and crystal orientation of material.
最后，讨论了原生直拉单晶硅中铜沉淀规律的机理。
Finally, the mechanism of copper precipitation in as-grown Czochralski silicon is discussed.
通过X射线单晶衍射的测定，表征和分析了该系列含联吡啶类配体铜(I)配合物的结构。
The structures of the serial copper (I) complexes contained derivative bipyridine ligands have been determined and studied by X-ray diffraction.
采用无电镀沉积技术在经过机械抛光的单晶硅衬底上沉积了铜纳米晶。
Copper nanocrystallites were deposited on mechanically polished single crystal silicon (sc-Si) wafers by electroless deposition method.
采用无电镀沉积技术在经过机械抛光的单晶硅衬底上沉积了铜纳米晶。
Copper nanocrystallites were deposited on mechanically polished single crystal silicon (sc-Si) wafers by electroless deposition method.
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