单晶硅的激光铣削试验研究。
单晶硅，钒钛制品加工制造项目已在区内落地。
Processing and manufacturing monocrystalline silicon and V-Ti products projects have been put into operation here.
这主要得益于它采用了单晶硅膜的SOI结构。
These benefit from the SOI Monocrystal silicon structure it possesses.
单晶硅炉的自动化控制系统，具有国际先进水平。
Silicon furnace automation control systems, with the advanced international level.
介绍了直拉法生长单晶硅的基本原理及工艺条件。
This paper introduces the basic principle and process conditions of single crystal silicon growth by Cz method.
最后，讨论了原生直拉单晶硅中铜沉淀规律的机理。
Finally, the mechanism of copper precipitation in as-grown Czochralski silicon is discussed.
直拉法生长单晶硅是目前最常用最成熟的工业化方法。
Growth of Czochralski silicon crystals is the most common and perfect one in industry.
同单晶硅相比，其吸收边发生了蓝移，并且吸收强烈。
Compared with crystal silicon, porous silicon has a stronger optical absorption and blue shift has taken place at its absorption edge.
对单晶硅脆性材料的超精密磨削加工作了大量的实验研究。
In this paper, the experimental investigation is made on the grinding of single brittle materials.
该设备专门用于太阳能单晶硅和多晶硅电池片的分选筛选。
The equipment is specially used in the filtration of solar energy mono-crystalline silicon and the poly-crystalline silicon cell pieces.
公开了一种在单晶硅生长过程中使用的掺杂硅熔体的制备方法。
A process for preparing doped molten silicon for use in a single silicon crystal growing process is disclosed.
其主要功能是：把电能转化为光能，芯片的主要材料为单晶硅。
Its main function is to convert the electric energy into light energy.
本文的工作是利用MEMS技术在单晶硅上制作集成PCR芯片。
The work described in this paper is to use MEMS technology to produce PCR microchip on silicon.
多晶硅电池含有细小颗粒的单晶硅，它含有很多细小光亮的成分。
These consist of small grains of monocrystalline silicon. The cells consist of many small, shiny elements.
多晶硅用直拉法(CZ)或磁场直拉法(mcz)拉制成单晶硅棒。
Silicon single crystals are produced mainly by Czochralski method (CZ) and magnetic field app-lied Czochralski method (MCZ).
采用无电镀沉积技术在经过机械抛光的单晶硅衬底上沉积了铜纳米晶。
Copper nanocrystallites were deposited on mechanically polished single crystal silicon (sc-Si) wafers by electroless deposition method.
目前实验室里的高效单晶硅太阳电池的效率已接近25％，提高的额度有限。
At present, the efficiency of the high-efficient single-crystal solar cell made in laboratory has been close to 25% and the extra scale is already limited.
其原因可能是单晶硅表面原子排列非常整齐，具有高度光滑和均匀的表面条件。
The involved reason was that monocrystalline silicon had a higher smooth and uniform surface.
利用离子注入技术，对稀土掺杂到半导体单晶硅中的光致发光行为进行了研究。
The photoluminescence properties of rare earth doped silicon were investigated with ion beam technique.
他也是河北科技大学半导体材料研究所副主任、河北宁晋县单晶硅产业园区顾问。
He also serves as a vice-director of semiconductor material research institute of Hebei University of Technology and a consultant to Hebei Ningjin Monocrystalline Silicon Industry Park.
在现有工艺和条件下，从电池性能上讲，单晶硅是制造太阳电池的比较理想的材料。
As for the living technology and condition, in view of capability, single crystal silicon is the ideal material for solar cell.
主要从事太阳能单晶硅棒、单晶硅片、太阳能电池组件的设计、生产、销售和服务。
We are mainly engaged in the designing, producing, sales and providing services of Solar Silicon ingots, Wafer, Solar cell and Solar module.
并用第一原理应力计算方法对单晶硅纳米切削过程中的脆塑转变的可行性进行了研究。
Moreover, the feasibility of brittle-ductile transition of monocrystalline Silion is studied with the method of first principle stress.
用表面增强拉曼散射技术研究单晶硅表面键合光敏染料，可获得信噪比强的SERS图。
The photosensitive dye bound to the monocrystalline silicon surface was investigated by means of SERS, and SERS which had strong signal-to-noise ratio (SNR) was obtained.
单晶硅晶体生长炉具有非线性和大纯滞后的特点，应用常规pid控制难以实现有效控制。
It is difficult to apply general PID control to the equipment of monocrystalline silicon growth with the nonlinear and great pure hysteresis characteristics.
生产单晶硅、多晶硅和非晶硅各系列品种规格、高效率的太阳能光伏大型组件及微型组件。
Every series breed specification, high efficiency solar energy producing single crystal silicon, polycrystal silicon and amorphous silicon vanquish the large-scale module and chip only.
简要介绍硬质合金、压电陶瓷和单晶硅的加工特点及利用超声微细加工这三种材料的优势。
The paper introduces simply the characteristics of three experimental materials used to process micro-structures, single-crystal silicon, piezoelectricity ceramic and cemented carbides.
经过深加工的玻璃基板，尺寸能达到极限公差。适用于多晶硅，单晶硅切割时使用的玻璃基板。
After processing the glass substrate, the size limits of tolerance can be achieved. For polysilicon, single use when cutting silicon substrates.
经过深加工的玻璃基板，尺寸能达到极限公差。适用于多晶硅，单晶硅切割时使用的玻璃基板。
After processing the glass substrate, the size limits of tolerance can be achieved. For polysilicon, single use when cutting silicon substrates.
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