由此，能获得其中翘曲较少且较不可能发生破裂的半绝缘氮化物半导体晶体衬底。
Thus, the semi-insulating nitride semiconductor crystal substrate in which warpage is less and cracking is less likely can be obtained.
由此，能获得其中翘曲较少且较不可能发生破裂的半绝缘氮化物半导体晶体衬底。
Thus, the semi-insulating nitride semiconductor crystal substrate in which warpage is less and cracking is less likely can be obtained.
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