本文的方法可用于计算有复杂形状带边的半导体异质结构的载流子性质。
The method used here is universal and can be used to deal with the properties of semiconductor heterostructures in which there is complex potential profile.
本文阐述了半导体异质结构电子的量子特性，如电子波输运、仑阻塞效应等。
The quantum characteristics of electrons in the semiconductor heterostructure, for example, quantum wave transport, Coulomb blockade effect are described.
为了设计以半导体异质结构量子点接触(QPC)为基础的器件，需要掌握QPC结构中静电势的分布及其控制方法。
In order to design the quantum point contact (QPC) devices based on the semiconductor heterostructure, electrostatic potential distribution and control methods of the QPC are needed to be considered.
异质结构是半导体激光器最基本也是最重要的结构。
Heterostructure is the most essential and important structure of semiconductor lasers.
系统分析了小尺寸半导体器件中的载流子非本地输运模型，重点研究了非均匀能带结构和异质结效应对输运电流密度的影响。
This paper analyzes the carrier non local transport model of small size semiconductor devices and studies the influences of nonsymmetrical band structure and heterogeneous effect on emphasis.
最后，我将介绍我们在二维半导体材料及其异质结构中的层间耦合和电荷传输的最新进展。
Finally, I will introduce our latest work on interlayer coupling and charge transfer in 2d atomically thin semiconductors and their heterostructures.
一种异质结构场效应晶体管(HFET)，可以包括由第一半导体材料制成的第一层(3)和由第二半导体材料制成的第二层(4)。
A hetero-structure field effect transistor (HFET), may include a first layer (3) made from a first semiconductor material and a second layer (4) made from a second semiconductor material.
一种方法，其使用纳米结构柔性层，利用HVPE在异质衬底(10)上生长高质量的平且厚的化合物半导体(15)。
A method utilizes HVPE to grow high quality flat and thick compound semiconductors (15) onto foreign substrates (10) using nanostructure compliant layers.
一种方法，其使用纳米结构柔性层，利用HVPE在异质衬底(10)上生长高质量的平且厚的化合物半导体(15)。
A method utilizes HVPE to grow high quality flat and thick compound semiconductors (15) onto foreign substrates (10) using nanostructure compliant layers.
应用推荐