腐蚀后芯片表面平整度、侧蚀等指标初步达到器件设计的要求。
After etching the surface of GaAs chip could be smooth and the isolation grooves have little edges, which can completely meet the requirements of device design.
曝光能量会因基板及油墨厚度的不同而变更，请进行试验以确认侧蚀程度后再认定，曝光尺控制在7 - 9级残膜。
Exposure energy will change with different CCL and the thickness of ink, so we must carry on experiment to confirm under-cut degree, exposure ruler limits 7-9 grade remnant film.
试验细部结构特征，发现侧空腔内的反射回漩流和突扩弧形面上的白色蚀带。
The flow structure displayed a reverse jet current in the lateral cavity and white corrosion on the lateral enlargement surface.
试验细部结构特征，发现侧空腔内的反射回漩流和突扩弧形面上的白色蚀带。
The flow structure displayed a reverse jet current in the lateral cavity and white corrosion on the lateral enlargement surface.
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