阻尼电阻r 6:对火花放电电流起缓冲作用,并阻尼高压输出回路中lc分布参数引起的寄生振荡。
Buffer resistance R6: playing buffer effect on spark discharge current and hindering. The parasitic vibration brought by LC distributing parameters of high-voltage output loop.
本发明提供的具有缓冲层结构的电阻转变型存储器制造工艺简单、制作成本低并且与传统CMOS工艺兼容。
The resistance transformation type memorizer with a buffer layer structure has simple manufacturing process and low manufacturing cost, and is compatible to the traditional CMOS process.
本发明提供的具有缓冲层结构的电阻转变型存储器制造工艺简单、制作成本低并且与传统CMOS工艺兼容。
The resistance transformation type memorizer with a buffer layer structure has simple manufacturing process and low manufacturing cost, and is compatible to the traditional CMOS process.
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