本文提出了低-常压两步外延生长技术。
A two-step epitaxial growth technique from low pressure to atmospheric pressure has been presented.
标签薄膜溶胶-凝胶工艺外延生长电性能。
BST thin films sol gel technique epitaxial growth electrical properties.
从外延形貌照片中观察到了外延生长台及生长螺线。
Epitaxial growth steps and growth spirals were observed from epitaxial film appearance photograph.
此外，分子束外延生长、激光消融等制备方法也有一定的应用。
In addition, such preparation methods as molecular beam epitaxy and laser ablation also see some applications.
使用X射线衍射和透射电镜分析，表明异质结是c轴取向外延生长。
X-ray diffraction and transmission electron microscopy establish that LCCO grew epitaxially inc-axis orientation on LCMO.
本文根据实际测量结果，一叙述了半导体衬底制片质量对外延生长的影响。
Based on actual measurement results, the influence of process quality of semiconductor substrate wafers on epitaxial growth is described.
测试结果表明，利用所采用的外延生长结构制备APD器件，具有可行性。
Experiments show that the epitaxial growth structure could be used in the preparation of APD devices.
自从分子束外延生长技术出现以来，半导体物理的研究获得许多惊人的突破。
Since molecular beam epitaxy technique appeared, the research of semiconductor physics has gained many amazing break throughs.
结果：1、超声波照射组胚胎贴附率、滋养细胞外延生长率均显著低于正常胚胎。
Results: 1. The attachment rate and the trophoblasts outgrowth rate in irradiated embryos were lower significantly than that in the normals.
本文对同质外延碳化硅单晶材料的生长机理和外延生长层的表征方法进行了研究。
This thesis focuses on growth mechanism of SiC homogeneity epitaxy and electrical characterization methods of epilayer.
它有效地增加了基体的表面积，有利于电沉积初期铬原子沿基体原有晶格的外延生长；
The surface area of the matrix enlarged effectively. At the beginning of the deposition, the chrome atoms grew along the outside of the matrix original crystal lattice. Ther…
通过改变外延生长工艺来调节两层薄膜的折射率，可在一定波导的厚度范围内实现单模传输。
By adjusting the difference of refractive index of the double layer film, single mode operation can be realized with a certain waveguide thickness.
本文对薄膜沉积的形核、生长过程，对同质外延、异质外延生长过程中的某些现象进行了研究。
Some of the processes involved in thin film nucleation and growth are discussed. Somephenomena presented in homogeneous and heteroepitaxy growth are also investigated.
再略为详细地讨论液相外延生长过程，因为晶体生长是实现集成光路使用的必不可少的一个环节。
The growth processes of liquid-phase epitaxy will be discussed in some detail, as crystal growth is a necessary step for the realization of integrated optics using.
包括锗硅单层、多层结构的外延生长、以及金属诱导生长多晶锗硅和肖特基二极管原型器件的制备。
The research focused on the growth of SiGe single layer, multi-layers, metal induced growth of poly-SiGe, Schottky barrier diodes (SBDs) were fabricated.
首先优化设计了器件结构，并利用金属有机物化学气相淀积（MOCVD）进行了器件的外延生长。
The device structure is optimized firstly, then the structure is grown by metal organic chemical vapor deposition (MOCVD).
同时，这一方法可避免覆盖层生长太厚的开裂问题，结合侧向外延生长可以大大提高外延片的利用率。
At the same time, the method can avoid a craze problem caused by a thick covering layer, and increase extension plate utilization greatly combined with side extension growth.
利用位错形成能等于零(即错配应变能的降低等于位错自能)的条件，得到了外延生长薄膜的临界厚度。
The critical thickness is determined from the zero formation energy of a misfit dislocation. i. e. the amount of reduced mismatch strain energy equaling the amount of creased dislocation self energy.
比较了外延生长参数，如生长温度、生长压强、碳硅比和气流流速，与生长率和净载流子浓度的影响关系。
The influence of growth parameters including gas flow, C/Si ratio, growth temperature and pressure on growth rate and layer uniformity in thickness and doping are discussed.
用氢气、丙酮蒸汽为源气体，通过微波增强的化学气相沉积方法，实现了在金刚石表面气相外延生长单晶金刚石薄膜。
Vapour epitaxial grown single-crystal diamond film on diamond surface was obtained by microwave reinforced chemical vapour deposition method, using hydrogen, aceton vapour as source of gas.
结果表明，在表面外延生长初期沉积层呈现出非常丰富的分形几何特征，通过控制生长参数，可以得到不同微结构的团簇。
It is shown that at the initial stage of growth, the morphologies present ample fractal shape and by controlling growth parameters it is possible to obtain nano clusters with different structures.
液滴外延生长半导体材料是一种较为新颖的MBE生长技术，而图形衬底对液滴外延的影响到目前为止并没有非常详细的研究结果。
Droplet epitaxy is a new MBE growth method for semiconductor materials, but there has been no effective research concerning the influence of patterned substrate on droplet epitaxy until now.
本文介绍了薄膜晶体生长的最新技术——化学束外延(CBE)。
Chemical beam epitaxy (CBE), a novel technique for thin-film crystal growth, is introduced.
采用“正交设计”的数学方法安排外延试验，找到多层连续均匀生长的条件。
The epitaxy experiments are arranged to take advantage of the mathematical method of orthogonal process design.
给出了在较低阈值下节约材料生长时间的各外延层厚度。
Appropriate thicknesses of epilayers are given with lower threshold gain and more economical material growth time.
本文论述了SOI方法之一——ELO（外延横向覆盖生长）技术的特点和工艺方案。
The characteristics and processing methods of ELO (Epitaxial Lateral Overgrowth), one of SOI technologies, have been described.
指出济宁城市空间是按照外延式和内涵式扩展两种方式扩展的，城市空间形态采取了同心圆式扩张、跳跃式生长两种形式的演变。
In accordance with the urban space is that jining denotative and connotative extended two ways to expand, urban space form adopted concentric type expansion, leaping growth two forms of evolution.
通过使用HVPE的外延横向过生长实现连续的化合物半导体厚膜(15)或晶片的进一步的生长。
Further growth of continuous compound semiconductor thick films (15) or wafer is achieved by epitaxial lateral overgrowth using HVPE.
X射线衍射，扫描电子显微镜，X射线光电子能借测量表明生长的BNN膜是外延单晶膜。
The measurements of XRD, SEM and XPS show that the as - grown BNN film is epitaxial single crystal with smooth surface.
X射线衍射，扫描电子显微镜，X射线光电子能借测量表明生长的BNN膜是外延单晶膜。
The measurements of XRD, SEM and XPS show that the as - grown BNN film is epitaxial single crystal with smooth surface.
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