The drawing of single crystal silicon in a closed thermal system is described.
本文介绍采用密闭热系统拉晶工艺拉制硅单晶的情况。
Impact Analysis of Gaussian Beam on Measurement of Single Crystal Silicon Sphere Diameter.
高斯光束对标准硅球直径测量的影响分析。
This paper introduces the basic principle and process conditions of single crystal silicon growth by Cz method.
介绍了直拉法生长单晶硅的基本原理及工艺条件。
As for the living technology and condition, in view of capability, single crystal silicon is the ideal material for solar cell.
在现有工艺和条件下，从电池性能上讲，单晶硅是制造太阳电池的比较理想的材料。
A layer of europium oxide red light luminescent thin film is deposited on one side surface of a single crystal silicon substrate.
在单晶硅衬底的一个侧面沉积有一层氧化铕红光发光薄膜。
Copper nanocrystallites were deposited on mechanically polished single crystal silicon (sc-Si) wafers by electroless deposition method.
采用无电镀沉积技术在经过机械抛光的单晶硅衬底上沉积了铜纳米晶。
A method for manufacturing an ink-jet print head including: preparing a single crystal silicon wafer having a (110) crystal plane orientation, as a substrate;
一种制造喷墨打印头的方法，包括：准备具有（110）晶面取向的单晶硅晶片作为基板；
It is showed that the surface roughness is mainly related with the average grain size and feed per wheel revolution for the brittle materials such as single crystal silicon.
研究结果表明，对于微晶玻璃等脆性材料，其表面粗糙度主要与砂轮的平均磨粒尺寸、砂轮速度、进给量及磨削深度等因素有关。
An experiment of single crystal silicon EDM have been carried out in this paper. Experimental results show that EDM is a effective machining method to single crystal silicon.
对单晶硅材料进行电火花加工工艺试验研究的结果表明，在一定的条件下，电火花加工工艺可成为单晶硅材料的一种较有效的加工方法。
Select a soluble europium salt solution as the raw material, and deposit the thin film on the single crystal silicon wafer by utilizing a three-electrode electrochemical cell.
选择可溶性铕盐溶液为原料，利用三电极电化学池在单晶硅片上进行薄膜沉积。
The utility model relates to a hollow shaft magnetic fluid sealing device of a non-locking device used for a single crystal silicon furnace and silicon chip furnace equipment.
本实用新型涉及一种用于单晶硅炉、硅芯炉设备的无锁紧装置的空心轴磁流体密封装置。
Every series breed specification, high efficiency solar energy producing single crystal silicon, polycrystal silicon and amorphous silicon vanquish the large-scale module and chip only.
生产单晶硅、多晶硅和非晶硅各系列品种规格、高效率的太阳能光伏大型组件及微型组件。
Nitrogen has a heavy impact on the properties of the single crystal silicon, and its properties, forms and mechanisms on reactions with related defects have been intensively investigated.
氮杂质对硅单晶的性质有重要的影响，氮在硅中的性质、存在形态以及和相关缺陷作用机理一直为人们所研究。
In the paper, experiments of surface strengthening process were made with single crystal silicon as electrode material and 45 steel as substrate material in kerosene on EDM forming machine.
以单晶硅作电极，用电火花成形机在煤油介质中对45钢进行表面强化实验研究。
Although high-quality single-crystal silicon may be the best-known material for making electronic components, it isn’t the only one—and it’s not the only one being teased into different shapes.
虽然高品质的单晶硅可能是制造电子元件最知名的材料，但它却不是唯一的材料，也不是唯一一个可以用来加工成不同形状的材料。
The paper introduces simply the characteristics of three experimental materials used to process micro-structures, single-crystal silicon, piezoelectricity ceramic and cemented carbides.
简要介绍硬质合金、压电陶瓷和单晶硅的加工特点及利用超声微细加工这三种材料的优势。
A process for preparing doped molten silicon for use in a single silicon crystal growing process is disclosed.
公开了一种在单晶硅生长过程中使用的掺杂硅熔体的制备方法。
The nano dots fabrication tests of Au film and single-crystal silicon were performed in air using scanning tunneling microscope(STM).
研究了大气状态下应用扫描隧道显微镜（STM）对金薄膜和单晶硅材料进行了纳米级电场加工实验。
Sensor element, which consists of a Fabry-Perot etalon fabricated from single-crystal silicon, connects with the LED and detector by fibers.
传感器敏感元件主体结构采用单晶硅的法布里帕罗标准具，并通过光纤与发光二极管和光电探测器等光学元件相连。
Indeed, the silicon wafer itself is cut from a large rod of silicon, which is grown from a single crystal, and so is itself a single crystal.
实际上，硅片本身是从一根大的硅棒上切片下来，硅棒由单晶生长而成，所以芯片本身也是一种单晶。
To overcome this constraint, the researchers first developed one-dimensional, single-crystal silicon electronics, which they reported in 2005.
为了克服这个限制，研究人员们首先开发了一维单晶硅电子产品。这项研究在2005年被报道。
In Chemical-Mechanical polishing experiments we produced optical quality super smooth surfaces on single-crystal silicon, but cannot insure the surface figure.
使用机械 -化学抛光法加工大尺寸单晶硅可获超光滑表面 ，但很难保证良好的面型。
Introduction: TDR-JN series of automatic crystal growing furnace are special equipment applied with Czochralski Technique for Silicon Single crystals materials growing.
TDR—JN系列全自动晶体生长炉是采用直拉法生长单晶硅材料的专用设备。
The contact damage and fracture property of silicon single crystal are investigated at room temperature by indentation, as well as the influence of the intended and unintended impurities.
室温下使用维氏硬度计研究了硅单晶表面的接触损伤及硅单晶中杂质对表面损伤的影响。
The variable regularity of surface roughness on diamond turned single crystal germanium and silicon was investigated in this paper.
本文研究了金刚石车削单晶锗、硅时表面粗糙度随切削方向的变化规律。
The deep levels in electron irradiated CZ silicon single crystal grown in pure nitrogen protective atmosphere has been studied.
本文研究了电子辐照在氮保护气氛中生长的直拉硅单晶中引入的深能级。
The calculation of single crystal magnetic induction coefficients from measured texture and magnetic induction data in a grain-oriented silicon steel strip has been discussed.
对由取向硅钢薄带的磁感和织构实测数据计算其单晶磁感系数进行了探讨。
The behavior of oxidation-induced stacking faults (OSF) in NCZ and CZ silicon single crystal was investigated.
采用直拉法生长普通和掺氮硅单晶，研究不同含氮浓度的晶体中氧化诱生层错（OSF）的行为。
The reference parameter values are determined from the growth of a reference silicon single crystal.
从参考硅单晶的生长来确定参考参数的数值。
The invention discloses the method of reclaiming and utilizing the silicon single crystal waste of semiconductor device and integrated circuit.
本发明公开了一种半导体器件与集成电路硅单晶废弃片的回收利用方法。
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