The fabrication of Bragg gratings on silicon-on-insulator (SOI) rib waveguides using electron-beam lithography is presented.
报道了一种用电子束曝光的方法在绝缘体上硅的脊状光波导上制做布拉格光栅的技术。
The fabrication process of a compact planar waveguide etched-grating(EDG) demultiplexer based on silicon-on-insulator(SOI) is studied.
研究了基于绝缘材料上的硅（SOI）材料的平面波导刻蚀光栅分波器的主要制作工艺。
An arrayed waveguide grating (AWG) demultiplexer with total internal reflection (TIR) mirrors is designed based on silicon-on-insulator (SOI) material.
设计了一种基于绝缘体上的硅材料的全内反射型阵列波导光栅解复用器件。
Silicon-on-insulator (abbreviated as SOI) optical waveguide is the base of silicon-based optical waveguide devices and other integrated optical devices.
SOI光波导是硅基光波导器件的基础，也是实现其它集成光学器件的基础。
Silicon-on-Insulator (SOI), boasting good optical, electronic and mechanical properties, is one of the common materials of Integrated Planar-Lightwave-Circuits (PLCs).
绝缘体上的硅（SOI）材料是制作平面光波导器件的一种主要材料，具有良好的光学、电学和机械特性。
The lifetime of free carriers in a silicon-on-insulator (SOI) rib waveguide, which is used for Raman amplification, is studied in connection with the nonlinear optical loss.
研究了用于喇曼放大的绝缘硅(SOI)脊形波导中自由载流子寿命与非线性光学损耗的关系。
Base silicon layer - the silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.
底部硅层ꢃ-在绝缘层下部的晶圆片，是顶部硅层的基础。
SOI (Silicon on Insulator) used for integrated circuit (IC) manufacturing has two advantages of increasing speed and reducing power consumption.
绝缘层上硅硅片用于制造集成电路具有高速、低功耗、集成度高等优势。
Specially, the photonic crystal waveguides based on SOI(silicon on insulator) are paid much attention to due to their miniaturization and low loss.
特别是以SOI材料为基础的光子晶体光波导以其小型化、低损耗的优势而备受人们的关注。
The high quality SOI (silicon on insulator) materials were prepared with highly selective and self-stopping full isolation by porous oxidized silicon (FIPOS) technology.
采用高选择和自终止多孔氧化硅全隔离技术制备了高质量的SOI材料。
This paper presented an on-chip integration of SOI (Silicon on insulator) CMOS analog IC and piezoresistive cantilever based on the techniques of MEMS and SOI CMOS.
基于MEMS技术和SOICMOS技术提出了一个包含放大电路与悬臂梁式压阻传感器的集成化方案。
On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.
与此同时，制备高质量的栅绝缘层用氮化 硅薄膜也是制备高性能薄膜晶体管（TFT）这一课题的需要。
The semiconductor substrate may be an SOI (silicon on insulator) structure.
所述半导体衬底可以是SOI（绝缘体上硅）结构。
The semiconductor substrate may be an SOI (silicon on insulator) structure.
所述半导体衬底可以是SOI（绝缘体上硅）结构。
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