本文从MOS管电容模型出发详细分析了MOS源漏自举电路的自举物理过程，认为其中负载管栅电容主要起耦合作用。
The processes of the bootstrapping from source and drain are analyzed in detail based on the capacitor model of MOSFET and it is pointed out that the gate capacitance mainly plays a part of coupling.
本文从MOS管电容模型出发详细分析了MOS源漏自举电路的自举物理过程，认为其中负载管栅电容主要起耦合作用。
The processes of the bootstrapping from source and drain are analyzed in detail based on the capacitor model of MOSFET and it is pointed out that the gate capacitance mainly plays a part of coupling.
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