The gate region was fabricated by V-groove and Al sputtering, which can simplify the process, and make devices flexible in the adjustment process.
使用V形槽工艺,用溅射铝的方法代替扩硼工艺制备静电感应晶体管的栅极区,简化了工艺流程,使器件在调试过程中具有很大灵活性。
The gate region was fabricated by V-groove and Al sputtering, which can simplify the process, and make devices flexible in the adjustment process.
使用V形槽工艺,用溅射铝的方法代替扩硼工艺制备静电感应晶体管的栅极区,简化了工艺流程,使器件在调试过程中具有很大灵活性。
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