Penny Zhang, General Manager, Shanghai Still Semiconductor Testing co., Ltd.
张宛平，总经理，上海依然半导体测试有限公司。
The semiconductor testing system makes full use of the high-powered ARM microprocessor S3C44B0. It is testified that the system can meet the requirement of function.
该系统充分发挥了S3C44B0嵌入式微处理器高性能优势，经调试证明，能够可靠地实现对半导体分立器件的参数测试和分选的功能。
The method of testing semiconductor RAM in processes on-line condition is highly different from conventional pattern sensitive method.
联机工作情况下对半导体随机存贮器的故障检测和诊断与一般的图案敏化法有显著的不同。
Probe card, method of designing the probe card, and method of testing semiconductor chips using the probe card.
探针卡，该探针卡的设计方法，以及使用该探针卡测试半导体芯片的方法。
Besides, the test board which is used for testing the semiconductor arrester's breakover voltage is designed.
另外，对于半导体放电管转折电压的测试，设计出相应的转折电压测试板，并完成调试。
The Trend of IDM Outsource and Opportunities for China Semiconductor Packaging & Testing Companies .
传统的IDM外包趋势与中国半导体封装产业的机遇?。
The effects of choosing lapping bevel Angle during testing semiconductor devices and LSI chips by spreading resistance technique on measurement accuracy have been investigated in this paper.
讨论了在检测半导体器件和集成电路芯片时，不同研磨倾斜角度对扩展电阻量值的影响。
A method is provided for testing a semiconductor device that includes both a digital (310) and analog (320) portion.
本发明提供一种用于测试包含数字部分(310)和模拟部分(320)两者的半导体装置的方法。
NBTI testing is a critical reliability test for modern semiconductor processes.
NBTI测试是现代半导体工艺的一个关键的可靠性测试。
A testing system for micro air pressure semiconductor sensor is constructed.
组建了一套用于半导体微气压传感器的测试系统。
The other one USES some conventional testing method to test the facet temperature of the semiconductor lasers.
另一类是利用一些常规的测量技术，测量半导体激光器的腔面温度的分布。
In this article, we used the first method to test the stable thermal resistance, and we introduced some testing methods to test the parameters of semiconductor lasers.
本文主要利用第一类方法，对半导体激光器阵列的稳态热阻进行测量，并详细介绍了半导体激光器各个参数的测量方法。
The influence of different data collection time of channel current on the side gating hysteresis effect is studied by changing the delay time of semiconductor characteristic testing set.
采用平面选择注入隔离工艺制作MESFET及旁栅电极，通过改变半导体特性测试仪的延迟时间参数，深入研究了不同沟道电流的数据采集时间对旁栅效应迟滞现象的影响。
The influence of different data collection time of channel current on the side gating hysteresis effect is studied by changing the delay time of semiconductor characteristic testing set.
采用平面选择注入隔离工艺制作MESFET及旁栅电极，通过改变半导体特性测试仪的延迟时间参数，深入研究了不同沟道电流的数据采集时间对旁栅效应迟滞现象的影响。
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