A method of measuring positron lifetime is used to investigate temperature dependence of positron trapping at defects in neutron-irradiated silicon crystals.
用正电子湮没寿命测量方法研究了在中子辐照硅单晶缺陷中正电子捕获的温度效应。
A method of measuring positron lifetime is used to investigate temperature dependence of positron trapping at defects in neutron-irradiated silicon crystals.
用正电子湮没寿命测量方法研究了在中子辐照硅单晶缺陷中正电子捕获的温度效应。
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