The present invention can reduce the hot electron effect in low-temperature polysilicon film transistor effectively and raise the stability of low-temperature polysilicon film transistor obviously.
运用本发明，可有效地降低公知低温多晶硅薄膜晶体管的热电子效应，使得低温多晶硅薄膜晶体管在工作时的稳定性能够有明显的改善。
The present invention can reduce the hot electron effect in low-temperature polysilicon film transistor effectively and raise the stability of low-temperature polysilicon film transistor obviously.
运用本发明，可有效地降低公知低温多晶硅薄膜晶体管的热电子效应，使得低温多晶硅薄膜晶体管在工作时的稳定性能够有明显的改善。
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