Firstly, PSMs were prepared by the pulsed electrochemical etching method and the experimental conditions were optimized.
用电化学脉冲腐蚀法制备多孔硅微腔，优化了实验参数。
Patterned porous silicon (PS) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method.
基于氢离子注入技术和典型电化学阳极浸蚀法制备了多孔硅有图(PS)薄膜。
Patterned porous silicon (PS) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method.
基于氢离子注入技术和典型电化学阳极浸蚀法制备了多孔硅有图(PS)薄膜。
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