For the high scanning rate, the voltammetric behaviour can be explained in terms of the finite diffusion interface model.

用有限扩散边界模型解释了高电位扫速下膜电极的伏安行为。

youdao

For the high scanning rate, the voltammetric behaviour can be explained in terms of the finite diffusion interface model.

用有限扩散边界模型解释了高电位扫速下膜电极的伏安行为。

youdao