The etching of CVD diamond thick films was accomplished by the ECR plasma under optimized pressure conditions and the etching mechanism is studied.
利用该等离子体在优化的气压条件下对化学气相沉积金刚石膜进行了刻蚀， 并研究了刻蚀机理。
These indicate that copper is an ideal substrate for the preparation of thick diamond films.
因此铜是制备金刚石厚膜的理想基体材料。
Thick diamond films were deposited by DC plasma jet using methane as carbon source.
以甲烷为碳源气体，用直流等离子射流法制备了金刚石膜。
In this dissertation, Freestanding Thick Diamond films (FTDF) prepared by CVD method are applied as substrates of piezoelectric materials and the piezoelectric films are investigated systematically.
本文以CVD方法制备的自持金刚石厚膜为基片，沉积压电薄膜并系统研究了压电薄膜的各项性能。
In this dissertation, Freestanding Thick Diamond films (FTDF) prepared by CVD method are applied as substrates of piezoelectric materials and the piezoelectric films are investigated systematically.
本文以CVD方法制备的自持金刚石厚膜为基片，沉积压电薄膜并系统研究了压电薄膜的各项性能。
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