• The AES suggests that the interaction between gate metallization and GaAs active layer has taken place and the Schottky contact interface becomes ambiguous after stressing.

    应力试验样品,肖特基势垒接触界面模糊明显的扩散反应发生.。

    youdao

  • In the paper, the dam seepage analysis is conducted with no depth contact interface element to simulate layer surface.

    本文采用厚度接触界面单元模拟层面进行坝体渗流分析

    youdao

  • In the paper, the dam seepage analysis is conducted with no depth contact interface element to simulate layer surface.

    本文采用厚度接触界面单元模拟层面进行坝体渗流分析

    youdao

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