This paper calculates the expression between minority-carrier lifetime and switching time in short diode by analyzing the continuity equation when considering the surface recombination.
并使用连续性方程,在考虑表面复合过程的情况下,提出了短二极管的少子寿命计算公式。
This paper calculates the expression between minority-carrier lifetime and switching time in short diode by analyzing the continuity equation when considering the surface recombination.
并使用连续性方程,在考虑表面复合过程的情况下,提出了短二极管的少子寿命计算公式。
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