Using X-ray diffraction technique, the process of the crystal growth of metal ultrafine particles, which are prepared by sputtering method and deposited on the silica! Substrate, have been researched.
利用X -射线衍射技术对溅射沉积在非晶二氧化硅基底上的金属晶体超微粒的生长特性进行实验研究。
High quality ITO transparent conductive film was prepared by reactive low voltage ion plating technique, which is different to the most common sputtering method to deposit ITO film.
溅射镀膜方法是制备ito透明导电膜最常用也是实验研究最多的方法。
Silicon oxide ion barrier film was successfully fabricated on the input-face of microchannel plate by magnetron sputtering method.
本文利用射频磁控溅射方法，在微通道板输入面上成功地制备出二氧化硅防离子反馈膜。
The rich rare earth transition metal amorphous films were prepared by DC double target co sputtering method.
用直流共溅射方法制备了富稀土-过渡族金属非晶态合金薄膜。
All samples were prepared by rf magnetron sputtering method.
所有样品采用射频辅助磁控溅射方法制备。
In particular, the amorphous titanium oxide is obtained by using the reactive sputtering method and via deposition at a low temperature and at a high film formation rate.
特别是利用反应性溅射法，在低温下以高成膜速度进行堆积，得到非晶的氧化钛。
Raman spectrometer and atom force microscope were employed to study and determine the structure and characteristics of the films prepared by the method of magnetron sputtering with graphite target.
用激光拉曼谱和原子力显微镜等现代分析手段研究了磁控溅射石墨靶制备的薄膜的结构和特性。
Magnetron sputtering is common method for preparating metal film resistor. by this method, the target is very important for the performance of the resistor.
在金属膜电阻器的生产过程中，靶材是非常关键的，它制约著金属膜电阻器的精度、可靠性、 电阻温度系数等性能。
The paper has outlined the dispersion technology, sticking method and sputtering process for powder specimen studied by using SEM.
阐述了用扫描电镜研究粉末试样的分散技术、固定方法和镀膜技术。
High resistance AZO films are fabricated on quartz substrates by radiofrequency (RF) magnetron sputtering deposition method in the environment with high oxygen proportion.
在石英衬底上采用射频磁控溅射的方法制备高电阻azo薄膜，其中高电阻由高氧氩比环境得到。
The evaluating method of sputtering cleanout effect on metal target surface by volt-ampere characteristic of target cathode has been given, which provides effective approach to eliminate...
给出了金属靶阴极表面溅射清洗效果的伏安特性评价法，为克服“靶中毒”提供了有效的技术途径。
The invention relates to a magnetic confinement magnetron sputtering method and a magnetron sputtering device prepared by use of the same.
本发明涉及一种磁约束磁控溅射方法及利用该方法制备的磁控溅射装置。
The invention relates to a magnetic confinement magnetron sputtering method and a magnetron sputtering device prepared by use of the same.
本发明涉及一种磁约束磁控溅射方法及利用该方法制备的磁控溅射装置。
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