P-type semiconductor zinc oxide films, process for preparation thereof, and pulsed laser deposition method using transparent substrates.
型半导体氧化锌薄膜，其制备方法，和使用透明基片的脉冲激光沉积方法。
Aluminum-doped zinc oxide (ZAO) ceramic targets for sputtering were fabricated by hot isostatic pressing (HIP) and ZAO transparent conducting thin films were prepared by dc magnetron sputtering.
用热等静压法烧结制备了高导电性ZAO（铝掺杂氧化锌）陶瓷靶材，并用直流磁控溅射法制备出ZAO透明导电薄膜。
With the traditional tin indium oxide transparent electrode replaced by the zinc oxide transparent electrode of the invention, the manufacturing process is simplified and cost is lowered.
采用本发明的氧化锌透明电极取代传统的氧化铟锡透明电极，简化了制备工艺，降低了成本。
With the traditional tin indium oxide transparent electrode replaced by the zinc oxide transparent electrode of the invention, the manufacturing process is simplified and cost is lowered.
采用本发明的氧化锌透明电极取代传统的氧化铟锡透明电极，简化了制备工艺，降低了成本。
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