The decrease of the gate oxide, the differences of field oxides processing and the selection of the substrate materials will all affect the total dose radiation effects of MOS devices.
器件栅氧厚度的减小、场氧工艺的改变以及衬底材料的不同等都将导致MOS器件的总剂量辐射效应发生改变。
Radiation effects in si ICs, such as total dose effect, single event effect, et al., can be utilized to measure space radiation environment.
空间辐射环境能够引起半导体集成电路发生的总剂量效应、单粒子效应等辐射效应，可以被用来进行空间辐射环境监测。
Radiation effects in si ICs, such as total dose effect, single event effect, et al., can be utilized to measure space radiation environment.
空间辐射环境能够引起半导体集成电路发生的总剂量效应、单粒子效应等辐射效应，可以被用来进行空间辐射环境监测。
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