A method of severing a thin film semiconductor device.
在切断一薄膜半导体器件的方法。
This paper reports the formation of the semiconductor CO2 thin-film and the structure, sensitivity, stability, temperature characteristic and response property of this sensing film.
报导了半导体薄膜CO2气体敏感膜的制备，敏感膜的结构特性、温度特性、灵敏度及响应特性和稳定度。
Physical vapor deposition in horizontal systems has been used for the growth of crystal thin-film of organic semiconductor pentacene.
用物理气相沉积法在水平系统中生长有机半导体并五苯晶体薄膜。
The study of the thin-film structure and morphology during the thin-film growth has practical application in many areas, in particular in semiconductor industry.
薄膜生长过程中的结构和形态的研究在很多领域都有实际的应用，特别是在半导体制造领域。
In order to meet the requirements of optical, electronic and mechanical performance of semiconductor products, it is necessary to measure thin film stress during the deposition.
为使半导体产品达到所要求的光学、电子和机械性能，必须实时地在沉积过程中直接测量薄膜应力。
A circuit adapted to dynamically activate an electro-optical display device is constructed from a thin-film gate-insulated semiconductor device.
一个适用于动态激活光电显示器的电路是由薄膜绝缘栅半导体器件构成的。
In one embodiment, a thin film transistor comprises a layer of the organic semiconductor material.
在一个实施方案中，薄膜晶体管包含有机半导体材料层。
Therefore, a semiconductor device including a thin film integrated circuit can be manufactured easily.
因此，可以容易地制造包含薄膜集成电路的半导体器件。
According to the present invention, formation of lattice defect in an oxide semiconductor layer and entering of moisture can be prevented, improving reliability of the thin film transistor.
本发明能够抑制氧化物半导体层中晶格缺陷的形成并抑制湿气的进入，从而提高薄膜晶体管的可靠性。
Thus, there is an advantage in that it is possible to grow a flat nitride semiconductor thin film with voids and fewer defects.
因此，本发明的优势在于能够制作具有空隙和较少缺陷的平面氮化物半导体薄膜。
The present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semiconductor layer.
本发明提供了一种其中铝原子不可能扩散到氧化物半导体层的薄膜晶体管。
A semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability is provided in the present invention.
本发明的目的之一在于使用氧化物半导体层提供具备其电特性及可靠性优异的薄膜晶体管的半导体装置。
A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided.
提供了一种包括薄膜晶体管的半导体器件，该薄膜晶体管具有氧化物半导体层和优秀的电特性。
The present invention provides a thin film transistor in which a substantial length of a channel is shortened to miniaturize a semiconductor device and a manufacturing method thereof.
本发明提供一种薄膜晶体管及其制造方法，其中该晶体管的沟道的基本长度被缩短以微型化半导体装置。
The compound semiconductor is a thin film of a single crystal.
化合物半导体为单晶薄膜。
Semiconductor bridge (SCB) was utilized to ignite energetic materials with thin film discharge and characterized of low input energy, high safety and logic control possibility.
半导体桥(SCB)通过桥膜放电进行含能材料的点火，具有低点火能量、高安全性以及能与数字逻辑电路组合等优点。
Ambipolar conduction is an essential and fundamental property in the application of the conventional inorganic complementary metal-oxide-semiconductor thin film transistors.
在传统互补式金氧半薄膜电晶体的应用上，双极性传输是一基本且重要的特性。
Ambipolar conduction is an essential and fundamental property in the application of the conventional inorganic complementary metal-oxide-semiconductor thin film transistors.
在传统互补式金氧半薄膜电晶体的应用上，双极性传输是一基本且重要的特性。
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