A semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability is provided in the present invention.
本发明的目的之一在于使用氧化物半导体层提供具备其电特性及可靠性优异的薄膜晶体管的半导体装置。
A method of severing a thin film semiconductor device.
在切断一薄膜半导体器件的方法。
Therefore, a semiconductor device including a thin film integrated circuit can be manufactured easily.
因此，可以容易地制造包含薄膜集成电路的半导体器件。
The present invention provides a thin film transistor in which a substantial length of a channel is shortened to miniaturize a semiconductor device and a manufacturing method thereof.
本发明提供一种薄膜晶体管及其制造方法，其中该晶体管的沟道的基本长度被缩短以微型化半导体装置。
A circuit adapted to dynamically activate an electro-optical display device is constructed from a thin-film gate-insulated semiconductor device.
一个适用于动态激活光电显示器的电路是由薄膜绝缘栅半导体器件构成的。
A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided.
提供了一种包括薄膜晶体管的半导体器件，该薄膜晶体管具有氧化物半导体层和优秀的电特性。
A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided.
提供了一种包括薄膜晶体管的半导体器件，该薄膜晶体管具有氧化物半导体层和优秀的电特性。
应用推荐