Sputtering target is usually made of pure molybdenum sheet.
而溅射靶材多以金属纯钼板材为主。
Uses: sputtering target, physical vapor deposition, high temperature alloys.
溅射靶材、物理气相沉积、高温合金。
The thickness uniformity of films deposited by planar magnetron sputtering target was analyzed theoretically.
从理论上分析了平面磁控溅射靶沉积薄膜的厚度均匀性。
A new net-shape cathode sputtering target which has a simple structure and a high sputtering rate was put forward.
设计了一种网状阴极溅射靶，它是由多个空心阴极并列交叉组合而成。
Embodiments of the invention provide a method of welding sputtering target tiles to form a large sputtering target.
本发明提供一种焊接溅镀靶材以形成一大的溅镀靶材的方法。
The invention relates to a device for improving utilization rate of a high vacuum ion beam sputtering target material.
本发明涉及一种高真空离子束溅镀靶材利用率增强装置。
A new multiple hollow cathode sputtering target which has a simple structure and a high sputtering rate, was put forward.
研制了一种由多个空心阴极并列组合而成的可直接作为溅射靶的多重空心阴极溅射靶。
Uses: sputtering target, physical vapor deposition, high temperature alloy for high-voltage vacuum switch contacts and precision alloy additives.
用途：溅射靶材、物理气相沉积、高温合金、用于高压真空开关触头及精密合金添加剂。
This revolving target improved on the usage of target material and uniformity of film thickness comparing with conventional cylindric magnetron sputtering target.
与常规的圆柱形磁控溅射靶相比较，该旋转式靶提高了靶材利用率和膜厚均匀度。
The plasma can be 4 generated by hot-cathode discharge or RF discharge of gas. In addition, the device has four metal plasma sources, two magnetron sputtering targets, cold and hot target supports.
真空室内的气体等离子体可由热灯丝或射频放电产生，4另外还配置了4个金属等离子体源、两套磁控溅射靶和冷却靶台。
Magnetron Sputtering Technology has been applied in the field of film preparing widely, however, the quality of the film is influenced by stability of target current badly.
磁控溅射技术在薄膜制备领域的应用十分广泛，而溅射靶电流的稳定性极大的影响溅射镀膜的膜层质量。
Magnetron sputtering process has widely been applied to thin film preparation, during which, the quality of thin film is affected badly by the current stability of target.
磁控溅射技术在薄膜制备领域的应用十分广泛，而溅射靶电流的稳定性极大的影响溅射镀膜的膜层质量。
A method to predict the sputtering efficiency of a target is also described as well as a system for quantifying the texture homogeneity of a polycrystalline material.
还公开了一种用于预测一种目标的溅射效率的方法以及一种用于量化多晶物质的结构均匀性的系统。
Ion sputtering yields on t? Ti target are numerically calculated with TRIM program.
应用TRIM程序模拟了离子在氚钛靶上的溅射产额。
However, the predominant process of secondary ion sputtering is kinetic sputtering, which closely related to the momentum deposition on the target surface (nuclear stopping power).
而主导二次离子溅射的过程是动能溅射，它与靶表面的动量沉积(核能损)过程密切相关。
Raman spectrometer and atom force microscope were employed to study and determine the structure and characteristics of the films prepared by the method of magnetron sputtering with graphite target.
用激光拉曼谱和原子力显微镜等现代分析手段研究了磁控溅射石墨靶制备的薄膜的结构和特性。
The compound fraction of target surface was gotten from the rate equations of sputtering and the transport equations of reactive particles .
由溅射速率方程和反应粒子输运方程得出了靶面化合物的覆盖度。
The causes of metallic state sputtering with Mg target are analyzed.
以镁靶为例，分析了出现金属态沉积的原因。
In this paper, WO3 thin film was deposited on glass substrate and silicon slice by DC reactive magnetron sputtering and using metal tungsten as target.
本文采用直流反应磁控溅射工艺，以金属钨为靶材，在玻璃和单晶硅片上沉积了WO 3薄膜。
In recent years, with the growing size of LCD screen, the volume of sputtering shape molybdenum target increases correspondingly.
近年来随着液晶屏幕尺寸的不断增大，与之对应的溅射板形钼靶也随之增大了其自身的面积。
The sputtering ring is used on the sputtering machine using tantalum as target, and performance on every aspect reaches the requirement of design.
本发 明在钽作为靶材在溅射机上使用，各方面性能达到设计要求。
It is of great importance to improve the properties of DLC films deposited with simultaneous ion bombardment du-ring film growth by ion beam sputtering on graphite target.
在离子束溅射石墨靶淀积dlc膜的同时用离子束轰击，对于拓宽和改善DLC膜的性质有重要意义。
Magnetron sputtering is common method for preparating metal film resistor. by this method, the target is very important for the performance of the resistor.
在金属膜电阻器的生产过程中，靶材是非常关键的，它制约著金属膜电阻器的精度、可靠性、 电阻温度系数等性能。
Quadrupole mass spectrometer was used to analyze the plasma environment of RF magnetron sputtering PTFE target with pulsed bias.
采用四极质谱仪测量了试验参数对高压脉冲增强射频磁控溅射ptfe靶等离子体气氛的影响规律。
The rich rare earth transition metal amorphous films were prepared by DC double target co sputtering method.
用直流共溅射方法制备了富稀土-过渡族金属非晶态合金薄膜。
The target-substrate distance, the DC power and the sputtering pressure are very important factors for coercivity, on the other hand, the effect of sputtering time is not obvious.
并发现了靶基距、功率和溅射气压对薄膜矫顽力的影响较大，其中靶基距是薄膜矫顽力最主要的控制因素。 而溅射时间在所取的水平上对薄膜矫顽力的影响最小。
The target material is used as raw material and a CIGS film can be achieved by further sputtering.
以所述靶材为原料，经一步溅射可获得CIGS薄膜。
Ultrathin aluminum films were prepared by DC reactive magnetron sputtering. The target was made by 99.999% pure aluminum.
采用直流磁控溅射法溅射纯度为99.999%的铝靶制备了超薄铝膜。
The evaluating method of sputtering cleanout effect on metal target surface by volt-ampere characteristic of target cathode has been given, which provides effective approach to eliminate...
给出了金属靶阴极表面溅射清洗效果的伏安特性评价法，为克服“靶中毒”提供了有效的技术途径。
This paper studies the nucleation mechanism of the target-facing sputtering, and the variation of island-density with such parameters as deposition time and substrate temperature.
本文研究了对向靶溅射薄膜的成核机理。给出了在薄膜的生长初期基板上的岛密度随生长条件（如沉积时间、基板温度）的变化。
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