Three kinds of different new approaches to construct nanometer sized double barrier tunneling junctions for room temperature single electron tunneling studies were reported.
利用针尖修饰及纳米组装技术，采用三种不同的新方法构造出串联双隧穿结结构。
The generation mechanisms of these physical phenomena of Coulomb blockade, Coulomb staircase, single electron tunneling were described with single electron transistor(SET) as the research object.
以单电子晶体管为研究对象，系统阐述了库仑阻塞、库仑台阶、单电子隧穿等物理现象的产生机理。
Based on the orthodox theory, a model of a single electron transistor (SET) of metallic tunneling junctions is built using the master equation method.
在正统理论的基础上，使用主方程法建立了金属结单电子晶体管的器件模型和算法流程。
The electron states and tunneling transmission probability for a double barrier heterostructure system containing scattering centers are solved by using the single-band double-valley theory.
本文从单带双谷模型出发研究了电子在量子阱内遭到散射时电子状态及隧穿几率的变化。
We have used STM to investigate the electron tunneling spectroscopy, as well as the tunneling barrier heights, in two kinds of iron oxides prepared differently on iron single crystal surfaces.
报道了利用扫描隧道显微术（STM）对金属表面氧化物层进行电子隧道谱研究的结果。
Then the perturbative description of the interaction between a single electron and the laser field can be replaced by the tunneling ionization.
此时单个电子与场相互作用的微扰描述可以用隧穿描述取代。
Then the perturbative description of the interaction between a single electron and the laser field can be replaced by the tunneling ionization.
此时单个电子与场相互作用的微扰描述可以用隧穿描述取代。
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