In one embodiment, the dielectric material is silicon oxide.
在一实施例中，该电介质为氧化硅。
The silicon oxide layer is formed by reacting a first gas mixture and a second gas mixture.
氧化硅层是由第一个反应气体混合物和第二气体混合物。
OBJECTIVE To develop oral mucosal ointment of organic silicon oxide and evaluate its matrix.
目的研制有机硅氧化物类口腔黏膜药膏及对其基质进行评价。
A method for forming a silicon oxide layer for use in integrated circuit fabrication is provided.
为形成了集成电路制造中使用的硅氧化层的方法提供。
Usually, the first layer is of silicon oxide, an insulator, which is etched to a desired thickness.
通常，第一层为氧化硅，绝缘体，其被蚀刻至所需的厚度。
The invention provides a method for manufacturing CVD silicon oxide capable of improving forming quality.
本发明提供了一种可提高成形质量的CVD氧化硅制造方法。
Shatterproof is intended to replace silicon oxide, which serves a similar purpose but is prone to stress cracking.
碎，目的是取代氧化硅，它相似的目的，但很容易应力开裂。
At the same time, the influence of plasma charging and ion bombardment on the quality of silicon oxide are analyzed.
我们同时对反应离子刻蚀工艺中的等离子体充电效应和离子轰击对氧化硅造成的损伤进行了讨论。
The silicon oxide films on aluminum alloys matrix were prepared by chemical vapor deposition (CVD) in ambient pressure.
采用常压CVD方法在铝合金基底上制备出硅氧化合物陶瓷膜层。
Silicon oxide ion barrier film was successfully fabricated on the input-face of microchannel plate by magnetron sputtering method.
本文利用射频磁控溅射方法，在微通道板输入面上成功地制备出二氧化硅防离子反馈膜。
The technique which analyses iron oxide, silicon oxide, aluminum oxide from bauxite with fluorescent X-ray spectrometry was established.
建立了X荧光法测定铝土矿中主要成分氧化铁、氧化硅、氧化铝的方法。
Silicon oxide nanoparticle are prepared by chemical precipitation process, with sodium metasilicate and hydrochloric acid as raw material.
以工业硅酸钠和盐酸为原料，采用化学沉淀法制备出纳米二氧化硅。
Spherical nanoscale silicon oxide have been prepared by hydrothermal deposition process using silicon and silica as the starting materials.
以硅、二氧化硅为原料，采用水热沉积法制备了球状纳米硅氧化物。
The core materials consist of soluble phosphate binder, magnesium oxide hardener and high-purity silicon oxide as refractory aggregate materials.
这种芯料采用水溶性磷酸盐为粘结剂、氧化镁为固化剂、高纯二氧化硅为耐火骨料。
More important, the advance is based on silicon oxide, one of the basic building blocks of today's chip industry, thus easing a move toward commercialization.
更为重要的是，该进步是以当今芯片行业的基本要素之一——二氧化硅为基础，这使得该项技术的商业化过程比较容易。
Analysis by XPS graph obtained silicon atom ratio of oxygen is about 1:1, the results showed that the films were annealed silicon oxide film is rich silicon oxide.
通过对XPS图的分析得到硅氧的原子比大约是1：1，这个结果表明对薄膜进行退火后氧化硅薄膜是富硅氧化物。
The experiment, the preparation of the active silicon oxide and the test of properties, is designed for the inorganic chemical experiment in Department of Chemistry.
本文介绍的活性二氧化硅的制备及性质实验是为化学专业无机化学实验课而设计的一个综合性实验。
A high density recording medium with a super-resolution near-field structure including a mask layer comprising high melting point metal oxide or silicon oxide is provided.
提供一种包括包含高熔点金属氧化物或氧化硅的掩蔽层的具有超分辨率近场结构的高密度记录介质。
Scaling the programming voltage, while still maintaining 10 year data retention time, has been always a big challenge for Polysilicon Oxide Nitride Oxide Silicon (SONOS) researchers.
降低编程电压，同时仍保持十年的数据记忆时间，一直是多晶硅氮化硅氧化硅硅（SONOS）研究人员面临的一个巨大挑战。
The surface of the scale graphite presented evenly-distributed hydrophilicity by using above two treating methods, which was propitious to the deposition of hydrated silicon oxide on the …
两种处理使石墨鳞片的表面具有均匀分布的亲水性，有利于水合氧化硅在石墨鳞片表面的均匀沉积，从而制备得到性能优异的新型颜料—— 随角异色效应颜料。
The researchers placed a silicon nitride waveguide on a transparent nanoporous silicon oxide substrate that they specially developed to have a much lower refractive index than that of the waveguide.
其做法是在纳米级氧化硅透明衬底上生长氮化硅波导，衬底的折射率远小于波导。
Another line of research is to explore the use of photovoltaic (solar cell) materials other than silicon - such as iron oxide, which might be even cheaper to produce.
研究的另一个方向是挖掘光电池的潜在利用价值，比如制造成本更低的氧化铁。
After depositing some potassium niobium oxide onto a silicon surface, graduate student Michael Sygnatowicz used an optical microscope to take this photograph, resembling a distant galaxy.
研究生迈克尔·塞格纳托维茨先是将一些钾铌氧化物堆积到硅表面，接着用光学显微镜拍摄了这幅图片，看上去像一个遥远的星系一般。
It shows severe hump without capping silicon nitride layer due to moisture diffusion during thermal anneal after inter layer oxide deposition by LPCVD.
它表明没有覆盖硅氮化层的严重驼峰取决于经过LPCVD的内部涂层氧化沉淀后化学处理期间的湿度扩散。
The interaction between oxide films and silicon substrates is discussed.
本文对这些氧化物薄膜硅衬底的相互作用也进行了讨论。
The interaction between oxide films and silicon substrates is discussed.
本文对这些氧化物薄膜硅衬底的相互作用也进行了讨论。
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