In the third chapter, results and discussions of substrate transfer of thick silicon nitride film were elaborated.
第三章为多孔硅表面氮化硅的淀积与转移技术的结果与讨论。
The amorphous silicon nitride film between amorphous silicon film and glass substrate is found to have no any effects on the crystallization.
玻璃衬底与非晶硅膜之间的非晶氮化硅膜对非晶硅膜的晶化没有明显影响。
We have discovered that it is possible to tune the stress of a single-layer silicon nitride film by manipulating certain film deposition parameters.
我们已经发现，可以通过操作某些膜沉积参数来调节单层氮化硅膜的应力。
In the fabrication of solar cell, silicon nitride thin film is used as passivating film and anti-reflecting film.
硅基太阳能电池中，氮化硅用作钝化膜和减反射膜；
Lots of experiments indicate that the form, structure and properties of silicon nitride thin film prepared by PECVD are related to deposition parameters.
大量的实验研究表明，PECVD氮化硅薄膜的组成、结构及其性能与沉积参数密切相关。
The devices were passivated by the thin film of Photo-CVD silicon nitride, we found that the reliability of the devices was to be raised.
采用光化学气相淀积(光cvd)氮化硅薄膜进行器件的表面钝化，使整个器件提高了可靠性。
This article is about how to use Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) method to prepare amorphous silicon nitride (SiN_x) film.
探讨如何用电子回旋共振化学气相沉积(ECRCVD)设备制备非晶态氮化硅介质膜和光学膜。
The film may be substantially silicon nitride.
该薄膜大致上可为氮化硅。
On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.
与此同时，制备高质量的栅绝缘层用氮化 硅薄膜也是制备高性能薄膜晶体管（TFT）这一课题的需要。
On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.
与此同时，制备高质量的栅绝缘层用氮化 硅薄膜也是制备高性能薄膜晶体管（TFT）这一课题的需要。
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