The principle and the main parameters of the dry etching for silicon dioxide are introduced.
阐述了二氧化硅干法蚀刻的原理和主要的蚀刻参数。
The lithographic and etching process for a membrane creates a mesh of metal wires with silicon dioxide filling the space between them.
薄膜先以微影及蚀刻制程制作出金属线路，线路之间则填入二氧化矽。
The lithographic and etching process for a membrane creates a mesh of metal wires with silicon dioxide filling the space between them.
薄膜先以微影及蚀刻制程制作出金属线路，线路之间则填入二氧化矽。
应用推荐