Finally, this paper primarily establishes a testing method of characterization silicon carbide wafer quality.
最后，初步确立了表征碳化硅单晶抛光片质量的测试方法。
Characterization method of defects in silicon carbide by chemical etching and optimal process parameters are obtained.
论文得到了用腐蚀法表征碳化硅材料缺陷的方法和优化的工艺参数。
The research about silicon carbides was at the initial stage, especially the characterization, formation mechanism and distribution of defects.
目前，碳化硅的研究仍然处于起步阶段，尤其是对缺陷的表征、形成机理和分布都没有深入的研究。
The research about silicon carbides was at the initial stage, especially the characterization, formation mechanism and distribution of defects.
目前，碳化硅的研究仍然处于起步阶段，尤其是对缺陷的表征、形成机理和分布都没有深入的研究。
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