The invention is a preparation method of metal silicide film by microwave hydrogen plasma, relates to film preparation field.
一种微波氢等离子体制备金属硅化物薄膜的方法，用于薄膜制备领域。
Polycrystalline nickel silicide film formed on thin oxide by rapid thermal annealing (RTA) has been investigated by capacitance voltage ( C V ) measurements.
本文研究了在薄二氧化硅层上快速热退火（RTA）形成的多晶硅化镍膜的电特性。
In particular, when the refractory metal silicide film is a tungsten silicide film, the concentration of cu is preferable that it is in the range of 0.1 to 1.0 wt. %.
特别是，当难熔金属硅化物薄膜是硅化物薄膜的钨，铜的浓度最好，它在0.1至1.0范围为野生。%。
The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics.
硅化钛薄膜由于电阻率低和其它一些良好特性，在VLSI的栅电极和互连线中显示出它潜在的优势。
The results show that the MOSFETs, with higher doping, thicker si film and silicide, have lower parasitic bipolar gain.
提高体区掺杂浓度、增加硅膜和硅化物厚度能够减小增益。
The results show that the MOSFETs, with higher doping, thicker si film and silicide, have lower parasitic bipolar gain.
提高体区掺杂浓度、增加硅膜和硅化物厚度能够减小增益。
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