The MOS model used includes short-channel effects, gate-source capacitance, gate-drain capacitance, and output resistance.
使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。
The simulated results indicate that thinner and longer channel can reduce short channel effects, while thicker gate oxide will lead to higher subthreshold slopes.
模拟结果显示：越细长的沟道，器件的短沟效应越弱，器件的亚阈值斜率随栅氧化层增厚而加大。
The model includes the substrate bias effect, the short channel effect and the relation between these two effects.
它综合考虑了衬偏效应、短沟道效应以及两者之间的关系。
The short channel effects , the structure of LDD and SOI, phaseshift mask and multilevel interconnection were included.
LDD和SOI结构； 移相掩模光刻技术和多层金属布线工艺。
The short channel effects , the structure of LDD and SOI, phaseshift mask and multilevel interconnection were included.
LDD和SOI结构； 移相掩模光刻技术和多层金属布线工艺。
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