The object of the invention is to obtain a semiconductor storage which operates stably and can be produced by an MOS process.
本发明的目的在于，获得可用MOS工艺制造的、且可实现稳定动 作的半导体存储装置。
Micron is one of the world's largest companies focused on memory, storage and imaging semiconductor products-from DRAM to NAND Flash to CMOS image sensors.
美光科技有限公司是全球最大的半导体存储及影像产品制造商之一，其主要产品包括DRAM、NAND闪存和CMOS影像传感器。
The applications of the solid immersion lens such as near-field optical data storage, semiconductor nanostructures, solid immersion microscope and so on have been summarized.
总结了该技术在近场光学存储、半导体纳米结构研究、固浸显微镜等领域内的应用。
The main attention has been paid on amorphous rare earth- transition metal alloy films for magneto-optical storage and amorphous semiconductor films for phase change optical storage.
我们主要注意磁光型存储的非晶态稀土-过渡金属合金薄膜和相变型光存储的非晶态半导体薄膜两个方面。
Both of the right and left charge storage regions having a thin oxide layer on the semiconductor substrate, a nitride layer on the thin oxide layer and an insulating oxide layer on the nitride layer.
左和右电荷存储区都具有半导体衬底上的薄氧化物层、薄氧化物层上的氮化物层和氮化物层上的绝缘氧化物层。
The optical storage medium according to the invention USES a mask layer (2) as a super resolution near field structure, which comprises a doped semiconductor material.
根据本发明的光学存储介质使用作为超分辨率近场结构的掩模层(2)，该掩模层(2)包括掺杂半导体材料。
Based on Semiconductor Opening switch (SOS) effect, the SOS can switch off current of great density within nanoseconds, which is applied to pulse power generator of inductive energy storage.
基于SOS效应工作的半导体断路开关可以在纳秒级时间内关断大密度电流，因此可应用于电感储能的脉冲功率发生器。
It is a kind of storage device using semiconductor device as storage medium.
它是一种以半导体芯片作为存储介质的存储器。
A semiconductor integrated circuit comprises an electrostatic actuator, an estimation circuit, a storage circuit and a bias circuit.
半导体集成电路具有静电型致动器、检测电路、存储电路及偏置电路。
This invention provides a film forming method, a film forming device, a storage medium and a semiconductor device.
本发明提供成膜方法、成膜装置、存储介质以及半导体装置。
This invention provides a film forming method, a film forming device, a storage medium and a semiconductor device.
本发明提供成膜方法、成膜装置、存储介质以及半导体装置。
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